A high-purity coated polysilicon crucible
A polysilicon and crucible technology, applied in the field of solar cell production equipment, can solve the problems that the silicon nitride layer is difficult to achieve high density and cannot meet the production requirements, and achieve the prevention of sintering shrinkage, high isolation, and prevention of participation in reactions Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0032] as attached figure 1 As shown: the present invention is a high-purity coated polysilicon crucible, including a crucible body 1, on the surface of the crucible body 1, several pits 2 are evenly distributed, and on the surface of the crucible body 1, there are several pits 2 The surface is sequentially attached with a first nitride layer 3, a second oxide layer 4 and a third nitride layer 5;
[0033] The first nitride layer 3 is coated with milky silicon nitride on the surface of the crucible body 1 uniformly distributed with several pits 2 by brushing, and the coating of the first nitride layer 3 The thickness range is 2 mm;
[0034] The second oxide layer 4 is powdery silicon oxide, and the powdery silicon oxide is sprayed on the surface of the first nitrided layer 3 that has not been condensed by spraying, and the second oxide layer 4 is formed on the first surface of the first nitride layer 3. The surface of the nitride layer 3 is granular;
[0035] The third nitri...
Embodiment 2
[0045] as attached figure 1 As shown: the present invention is a high-purity coated polysilicon crucible, including a crucible body 1, on the surface of the crucible body 1, several pits 2 are evenly distributed, and on the surface of the crucible body 1, there are several pits 2 The surface is sequentially attached with a first nitride layer 3, a second oxide layer 4 and a third nitride layer 5;
[0046] The first nitride layer 3 is coated with milky silicon nitride on the surface of the crucible body 1 uniformly distributed with several pits 2 by brushing, and the coating of the first nitride layer 3 The thickness range is 6mm;
[0047] The second oxide layer 4 is powdery silicon oxide, and the powdery silicon oxide is sprayed on the surface of the first nitrided layer 3 that has not been condensed by spraying, and the second oxide layer 4 is formed on the first surface of the first nitride layer 3. The surface of the nitride layer 3 is granular;
[0048] The third nitrid...
Embodiment 3
[0058] as attached figure 1 As shown: the present invention is a high-purity coated polysilicon crucible, including a crucible body 1, on the surface of the crucible body 1, several pits 2 are evenly distributed, and on the surface of the crucible body 1, there are several pits 2 The surface is sequentially attached with a first nitride layer 3, a second oxide layer 4 and a third nitride layer 5;
[0059] The first nitride layer 3 is coated with milky silicon nitride on the surface of the crucible body 1 uniformly distributed with several pits 2 by brushing, and the coating of the first nitride layer 3 The thickness range is 10 mm;
[0060] The second oxide layer 4 is powdery silicon oxide, and the powdery silicon oxide is sprayed on the surface of the first nitrided layer that has not yet condensed in a slurry form by spraying, and the second oxide layer 4 is in the first nitrogen The surface of the layer 3 is granular;
[0061] The third nitride layer 5 is atomized silico...
PUM
Property | Measurement | Unit |
---|---|---|
length | aaaaa | aaaaa |
width | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com