Semiconductor package element and method for manufacturing same

A package and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc.

Inactive Publication Date: 2015-12-09
SAMSUNG SEMICON CHINA RES & DEV +1
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At such a temperature, the substrate 101, the chip, and the encapsulation layer 103 having different thermal expansion coefficients are bonded to each other, so that when the temperature drops to room temperature, the shrinkage of the encapsulation layer 130 causes the substrate 110 to be recessed along the surface on which the chip is mounted. (see figure 1 ), or cause the substrate 110 to protrude along the surface on which the chip is mounted (see figure 2 ) in the direction of warpage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor package element and method for manufacturing same
  • Semiconductor package element and method for manufacturing same
  • Semiconductor package element and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Embodiments of the invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will provide Those of ordinary skill in the art fully convey the concept of the embodiments of the present invention. In the following detailed description, numerous specific details are set forth by way of example in order to provide a thorough understanding of the relevant teachings. It will be apparent, however, to one skilled in the art that the present teachings may be practiced without such details. In other instances, well-known methods, procedures, components, and circuits have been described at a relatively high level and without detail in order to avoid unnecessa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a semiconductor package element and a method for manufacturing the same. The same semiconductor package element comprises a substrate, at least one chip, an encapsulation layer and at least one grid part, wherein the at least one chip is arranged on the substrate, the encapsulation layer is arranged on the substrate and encapsulates the at least one chip, and the at least one grid part is arranged in the encapsulation layer and comprises a plurality of main body parts, wherein the main body parts are opened and limited by a first rib and a second rib.

Description

technical field [0001] Exemplary embodiments of the present invention relate to the field of semiconductor packaging, and in particular, to a semiconductor package and a method of manufacturing the semiconductor package. Background technique [0002] At present, in semiconductor packages, the coefficient of thermal expansion (Coefficient of Thermal Expansion, CTE) of each component in the semiconductor package is different, which will cause the semiconductor package to warp, which in turn affects the subsequent mounting process and cutting process of the substrate. . For example, when a semiconductor chip is encapsulated on a substrate with an encapsulation material such as epoxy resin, warping of the semiconductor package may occur due to thermal expansion and contraction of the encapsulation material. [0003] figure 1 is a schematic cross-sectional view showing warpage of a semiconductor package according to the prior art, figure 2 is another schematic cross-sectional...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L23/29H01L23/373H01L23/552H01L21/56
CPCH01L23/3121H01L24/97H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/73265H01L2924/3511H01L2924/00012H01L2224/97H01L2924/15311H01L2924/3025H01L2224/85H01L2924/00
Inventor 顾立群
Owner SAMSUNG SEMICON CHINA RES & DEV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap