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Three-axis anisotropic magnetic resistance for improving Z-axis sensitivity and preparation method for three-axis anisotropic magnetic resistance

An anisotropic magnetism and sensitivity technology, which is applied to the manufacture/processing of magnetic field-controlled resistors, electromagnetic devices, and parts of electromagnetic equipment, can solve the problems of poor sensitivity of the vertical magnetoresistance 21 on the Z axis, and ensure Effects of stability and sensitivity improvement

Active Publication Date: 2015-12-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the magnetic domains of the vertical magnetoresistance 21 in the prior art are sorted better in the horizontal direction, the stability is better, but the magnetic domains that can participate in the work in the vertical direction are less, resulting in the vertical magnetoresistance 21 of the Z axis. The worse the sensitivity

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  • Three-axis anisotropic magnetic resistance for improving Z-axis sensitivity and preparation method for three-axis anisotropic magnetic resistance
  • Three-axis anisotropic magnetic resistance for improving Z-axis sensitivity and preparation method for three-axis anisotropic magnetic resistance
  • Three-axis anisotropic magnetic resistance for improving Z-axis sensitivity and preparation method for three-axis anisotropic magnetic resistance

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Embodiment Construction

[0028] The 3-axis anisotropic magnetoresistance with improved Z-axis sensitivity of the present invention and its preparation method will be described in more detail below in conjunction with the schematic diagram, which shows a preferred embodiment of the present invention, and it should be understood that those skilled in the art can modify the description herein the present invention, while still realizing the advantageous effects of the present invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0029] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details m...

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Abstract

The invention provides a three-axis anisotropic magnetic resistance for improving Z-axis sensitivity and a preparation method for the three-axis anisotropic magnetic resistance. A perpendicular magnetic resistance repair circuit specially for repairing perpendicular magnetic resistance is formed on the perpendicular magnetic resistance, so that the magnetic domain of the perpendicular magnetic resistance can be sequenced in the perpendicular direction along groove depth to ensure the stability of the perpendicular magnetic resistance; and in addition, the magnetic domain of the perpendicular magnetic resistance is sequenced in the perpendicular direction, so that the magnetic domains for involving in operation in the perpendicular direction are increased, so as to improve the sensitivity of the perpendicular magnetic resistance of the Z axis.

Description

technical field [0001] The invention relates to the field of semiconductor design and manufacture, more specifically, the invention relates to a 3-axis anisotropic magnetoresistance with improved Z-axis sensitivity and a preparation method thereof. Background technique [0002] Anisotropic magnetoresistive (AMR) sensor is a new type of magnetoresistance effect sensor in modern industry, AMR sensor is becoming more and more important, especially in the latest smartphones, as well as parking sensors, angle sensors, automatic braking in the automotive industry System (ABS) sensors and tire pressure sensors are widely used. In addition to the anisotropic magnetoresistive (AMR) sensor, the current main technical branches of magnetic sensors include Hall sensor, giant magnetic sensor (GMR), tunnel junction magnetic sensor (TMR), etc. The sensitivity of the sensor is much higher, and the technology is more mature than GMR and TMR, so the application of anisotropic magnetoresistive...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/02H01L43/12H10N50/10H10N50/01H10N50/80
Inventor 时廷王建鹏孔蔚然
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP