Field cut-off current control power device with adaptivity
A current control and power device technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problem of no field cut-off function, achieve the effect of getting rid of limited diffusion depth and enhancing self-adaptive characteristics
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Embodiment 1
[0031] The adaptive field-off current control type power device includes a metal conductive layer 101, one side of the metal conductive layer 101 is provided with a substrate or substrate epitaxial layer 100, where the substrate or substrate epitaxial layer 100 is two The alternative relationship, depending on the device structure and the corresponding process, can be the substrate or the substrate epitaxial layer. The substrate refers to the directly purchased substrate substrate, such as monocrystalline silicon, and the substrate epitaxial layer refers to a single crystal film grown on the purchased substrate substrate by epitaxy. Take PNPN type GTO as an example, such as figure 1 Using an N-type substrate, the P base region and the N emitter, that is, the cathode, are formed by diffusion on the front, and the P emitter, that is, the anode, is formed by diffusion on the back. At this time, the number 100 is actually the substrate. Take NPN type BJT as an example, such as fig...
Embodiment 2
[0034] The adaptive field-off current control type power device includes a metal conductive layer 101, one side of the metal conductive layer 101 is provided with a substrate or substrate epitaxial layer 100, where the substrate or substrate epitaxial layer 100 is two The alternative relationship, depending on the device structure and the corresponding process, can be the substrate or the substrate epitaxial layer. The substrate refers to the directly purchased substrate substrate, such as monocrystalline silicon, and the substrate epitaxial layer refers to a single crystal film grown on the purchased substrate substrate by epitaxy. Take PNPN type GTO as an example, such as figure 1 Using an N-type substrate, the P base region and the N emitter, that is, the cathode, are formed by diffusion on the front, and the P emitter, that is, the anode, is formed by diffusion on the back. At this time, the number 100 is actually the substrate. Take NPN type BJT as an example, such as fig...
Embodiment 3
[0042] The adaptive field-off current control type power device includes a metal conductive layer 101, one side of the metal conductive layer 101 is provided with a substrate or substrate epitaxial layer 100, where the substrate or substrate epitaxial layer 100 is two The alternative relationship, depending on the device structure and the corresponding process, can be the substrate or the substrate epitaxial layer. The substrate refers to the directly purchased substrate substrate, such as monocrystalline silicon, and the substrate epitaxial layer refers to a single crystal film grown on the purchased substrate substrate by epitaxy. Take PNPN type GTO as an example, such as figure 1 Using an N-type substrate, the P base region and the N emitter, that is, the cathode, are formed by diffusion on the front, and the P emitter, that is, the anode, is formed by diffusion on the back. At this time, the number 100 is actually the substrate. Take NPN type BJT as an example, such as fig...
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