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Photoelectric detector directly deposited on readout circuit and preparation method of photoelectric detector

A technology of photodetectors and readout circuits, applied in the field of photodetectors, can solve problems such as high production costs and limited resolution of photoelectric signal conversion devices, so as to reduce production costs, solve limited resolutions, and improve resolutions Effect

Active Publication Date: 2015-12-30
山西国惠光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problems of limited resolution and high production cost of existing photoelectric signal conversion devices, the present invention provides a photodetector directly deposited on a readout circuit and a preparation method thereof

Method used

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  • Photoelectric detector directly deposited on readout circuit and preparation method of photoelectric detector
  • Photoelectric detector directly deposited on readout circuit and preparation method of photoelectric detector
  • Photoelectric detector directly deposited on readout circuit and preparation method of photoelectric detector

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Embodiment Construction

[0028] A photodetector directly deposited on the readout circuit, including two sets of electrode contact conductors 3;

[0029] The first group of electrode contact conductors 3 are deposited on the upper surface of each pixel unit 1 of the readout circuit in one-to-one correspondence;

[0030] The second group of electrode contact conductors 3 are deposited on the upper surface of each planar metal interface ring 2 of the readout circuit in one-to-one correspondence;

[0031] The bottom carrier transport enhancement film layer 4 is deposited on the upper surface of the first group of electrodes contacting the conductor 3;

[0032] An active colloidal quantum dot film layer 5 is deposited on the upper surface of the bottom carrier transport enhancing film layer 4;

[0033] The upper surface of the active colloidal quantum dot film layer 5 is deposited with a top carrier transport enhancing film layer 6;

[0034] The upper surface of the top carrier transport enhancing film ...

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Abstract

The invention relates to a photoelectric detector, in particular to a photoelectric detector directly deposited on a readout circuit and a preparation method of the photoelectric detector. The problems that an existing optoelectronic signal conversion device is limited in resolution ratio and high in manufacturing cost are solved. The photoelectric detector directly deposited on the readout circuit comprises two sets of electrode contact conductors. The first set of electrode contact conductors is deposited on the upper surfaces of all pixel units of the readout circuit in a one-to-one correspondence mode. The second set of electrode contact conductors is deposited on the upper surfaces of all planar metal interface rings of the readout circuit in a one-to-one correspondence mode. Bottom carrier transport enhancing film layers are deposited on the upper surface of the first set of electrode contact conductors. Active colloid quantum dot film layers are deposited on the upper surfaces of the bottom carrier transport enhancing film layers. Top carrier transport enhancing film layers are deposited on the upper surfaces of the active colloid quantum dot film layers. The photoelectric detector is suitable for the field of photoelectric detection.

Description

technical field [0001] The invention relates to a photodetector, in particular to a photodetector directly deposited on a readout circuit and a preparation method thereof. Background technique [0002] Photodetectors are usually used to integrate with readout circuits to produce various photoelectric signal conversion devices (such as spectrometers, focal plane arrays, light-emitting diode arrays, spatial light modulators, etc.). Under the current technical conditions, due to the limitation of its own structure, the photodetector needs to adopt flip chip bonding technology or wire bonding interconnection technology to integrate with the readout circuit. However, due to flip chip bonding technology or wire bond Due to the precision limitation of interconnection technology, it is difficult to reduce the detection area size of the photodetector to the pixel level of the high-end readout circuit, which leads to the limitation of the resolution of the photoelectric signal convers...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/0352H01L31/18
CPCH01L31/035218H01L31/09H01L31/18H01L31/1828Y02P70/50
Inventor 肖恩·海因兹王伟斌
Owner 山西国惠光电科技有限公司