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Three-level module parallel structure and parallel method

A three-level, parallel technology, used in electrical components, output power conversion devices, and AC power input to DC power output, etc., can solve the problems of high conduction loss and low switching loss, and reduce conduction loss. Large, reduce switching loss, avoid the effect of large switching loss

Inactive Publication Date: 2015-12-30
SHANGHAI JIAO TONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] The three-level bridge arm includes I-type and T-type. As we all know, the advantage of the I-type three-level bridge arm is that all switch withstand voltage levels are half of the DC voltage, so its switching loss is low. However, its positive and negative levels Because the current passes through the two IGBTs, their conduction losses are high
These two parallel modes still have the disadvantages of Type I and Type T described above

Method used

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  • Three-level module parallel structure and parallel method

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Embodiment 1

[0027] This embodiment describes in detail the parallel connection structure of the three-level modules of the present invention. Its structural diagram is as figure 2 As shown, it includes: a parallel unit, and the parallel unit is composed of I-type three-level bridge arms and T-type three-level bridge arms connected in parallel.

[0028] In different embodiments, the number of parallel units can be one or more.

[0029] In this embodiment, there are 6 IGBTs (I-2, I-3, T-1, T-2, T-3, T-4), 2 CoolMosfets (I-1, I-4), and 2 power Diode (D 1 、D 2 ) and 2 capacitors (C 1 、C 2 )composition.

[0030] like figure 2 As shown, node 1 is connected to C 1 The anode of I-1, the drain of T-1; node 2 connects the source of I-1, the drain of I-2, D 1 node 3 (neutral point) connects the cathode of C1, the anode of C2, the anode of D1, the cathode of D2, the source of T-3; the node 4 connects the anode of D2, the source of I-3, I- The drain of 4; the node 5 is connected to the sou...

Embodiment 2

[0033] This embodiment takes three parallel units as an example, such as image 3 As shown, three parallel units are connected in parallel to each other to form a parallel module, and the parallel module is connected to a CPU, and the CPU controls the working process of the parallel module through PWM control technology.

[0034] In this embodiment, node 1 is connected to the drain of I-1 in the three bridge arms, the drain of T-1 in the three bridge arms, the anode of C1, and the positive pole of the voltage source; node 2 is connected to the three bridge arms The neutral point N1, N2, N3 in, wherein the device that each neutral point connects has detailed description in embodiment 1; Node 3 connects the source pole of I-4 in the three bridge arms, in the three bridge arms The drain of T-4, the cathode of C2, and the negative pole of the voltage source.

[0035] The outputs a, b, and c of the three bridge arms can be filtered to obtain three-phase alternating current.

[00...

Embodiment 3

[0039] This embodiment describes in detail the method for parallel connection of three-level bridge arms of the present invention, which includes the following steps:

[0040] S11: Control the I-type three-level bridge arm to open and then close to realize the soft switch of the upper and lower high-voltage tubes of the T-type three-level bridge arm;

[0041] S12: When the three-level bridge arm becomes stable, the I-type three-level bridge arm and the T-type three-level bridge arm are connected in parallel to form a current channel.

[0042] In this embodiment, the soft switching of the upper and lower high-voltage tubes of the T-type three-level bridge arm is realized by controlling the I-type three-level bridge arm to open first and then close, thereby avoiding the disadvantage of large switching loss of the T-type three-level bridge arm. On the other hand, when the bridge arm becomes stable, the I-type three-level bridge arm and the T-type three-level bridge arm are connec...

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Abstract

The invention discloses a three-level module parallel structure and a parallel method. The parallel structure is composed of one or more parallel units in a parallel mode, and each parallel unit is composed of an I type three-level bridge arm and a T-type three-level bridge arm in a parallel mode. The parallel method includes the steps that the I-type three-level bridge arms are controlled to be turned on and then turned off, and soft switching of upper and lower high-voltage tubes of the T-type three-level bridge arms is achieved; after the three-level bridge arms become stabilized, the I-type three-level bridge arms and the T-type three-level bridge arms are connected in parallel to form a current channel. The advantages of the I-type bridge arms and the advantages of the T-type bridge arms are combined, the switching loss is reduced, and the connection loss is reduced.

Description

technical field [0001] The invention relates to the technical field of power electronic conversion, in particular to a three-level module parallel connection structure and a parallel connection method. Background technique [0002] The three-level bridge arm includes I-type and T-type. As we all know, the advantage of the I-type three-level bridge arm is that all switch withstand voltage levels are half of the DC voltage, so its switching loss is low. However, its positive and negative levels Since the current passes through both IGBTs, their conduction losses are high. The T-type is just the opposite. Its positive and negative level currents only flow through one IGBT, so its conduction loss is relatively low, but its disadvantage is that the IGBT withstand voltage of the upper and lower switching tubes is equal to the DC voltage, so its switching loss is relatively high. It limits the improvement of its switching frequency. [0003] The traditional parallel structure of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/493H02M7/483
Inventor 王勇李骄阳冯亚东李钢
Owner SHANGHAI JIAO TONG UNIV
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