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Semiconductor device and power conversion device

A technology of power conversion devices and semiconductors, which is applied in the direction of output power conversion devices, measurement devices, and measurement of electrical variables, etc., and can solve problems such as inability to perform degradation detection

Inactive Publication Date: 2018-01-12
TOYOTA JIDOSHA KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the prior art mentioned above, it is not possible to perform degradation detection unless a dedicated diode element for failure detection is provided separately.

Method used

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  • Semiconductor device and power conversion device
  • Semiconductor device and power conversion device
  • Semiconductor device and power conversion device

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Embodiment Construction

[0021] Embodiments of the present invention will be described below with reference to the drawings.

[0022] figure 1 It is a figure which shows the example of a structure of the drive apparatus 1 which is an example of a semiconductor device. The drive device 1 includes a switching element S1 , a main diode D1 , a sense diode D2 , and a degradation detection circuit 50 .

[0023] The switching element S1 has a main transistor 12 and a sensing transistor 13 . The main transistor 12 is an example of a main element, and the sensing transistor 13 is an example of a sensing element smaller in size than the main element.

[0024] Main diode D1 has a cathode connected to the collector of main transistor 12 and an anode connected to the emitter of main transistor 12 . The collector of the main transistor 12 is an example of one main electrode of the main element, and is connected to the collector terminal C of the switching element S1. The emitter of the main transistor 12 is an ...

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PUM

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Abstract

There is provided a semiconductor apparatus comprising: a switching element including a main element and a sense element; a main diode whose cathode is connected to a first main electrode of the main element and whose anode is connected to a second main electrode of the main element; a sense diode whose cathode is connected to a first main electrode of the sense element and whose anode is connected to a second main electrode of the sense element; and a deterioration detection circuit configured to apply a voltage to a sense node, and detects a deterioration of the switching element or the main diode based on a forward current flowing in the sense diode, being detected while the voltage is applied, the voltage being applied during an OFF period of switching element, wherein the sense diode is disposed for detecting current flowing through the main diode.

Description

technical field [0001] The present invention relates to a semiconductor device and a power conversion device. Background technique [0002] Conventionally, there is known a failure detection device that detects degradation of a switching element (for example, refer to Patent Document 1). This failure detection device includes a failure detection dedicated high breakdown voltage diode element externally connected to the collector of the switching element, and detects deterioration of the switching element based on a voltage detected by the high breakdown voltage diode element. [0003] Patent Document 1: Japanese Patent Laid-Open No. 2009-159671 [0004] However, in the prior art described above, degradation detection cannot be performed unless a dedicated diode element for failure detection is provided separately. Contents of the invention [0005] Therefore, an object of the present invention is to provide a semiconductor device and a power conversion device that can pe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/00H02M7/5387G01R31/27
Inventor 长内洋介
Owner TOYOTA JIDOSHA KK