Secondary sapphire wafer annealing method

A sapphire wafer and secondary annealing technology, which is applied in the field of sapphire wafers, can solve the problems of large-sized sapphire wafers, great influence on processing release uniformity, uneven processing stress release, etc., and achieve uniform processing stress release and warpage The effect of small degree and high yield

Inactive Publication Date: 2016-02-17
江苏吉星新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a secondary annealing method for sapphire wafers, to solve the problem that the current annealing process adopts primary annealing, the processing str

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Embodiment 1: the secondary annealing method of sapphire wafer, its annealing step is as follows:

[0018] (1) Cleaning: firstly clean the sapphire wafer with clean water to remove dust and impurities on the surface;

[0019] (2) The first annealing treatment: Put the cleaned sapphire wafer into the annealing furnace for the first annealing treatment. The first annealing is divided into three stages, including the first stage, the second stage and the third stage: In the first stage, the temperature was rapidly raised to 600°C at a heating rate of 2°C / min, and kept for 1 hour; in the second stage, the temperature was raised to 1000°C at a heating rate of 2°C / min, and kept for 1 hour; in the third stage, the temperature was raised to 2°C / min The heating rate is raised to 1600°C and kept for 10 hours;

[0020] (3) The first cooling treatment: the sapphire wafer after the third stage of the first annealing is cooled to room temperature at 20°C per hour and then released f...

Embodiment 2

[0026] Embodiment 2: the secondary annealing method of sapphire wafer, its annealing step is as follows:

[0027] (1) Cleaning: firstly clean the sapphire wafer with clean water to remove dust and impurities on the surface;

[0028] (2) The first annealing treatment: Put the cleaned sapphire wafer into the annealing furnace for the first annealing treatment. The first annealing is divided into three stages, including the first stage, the second stage and the third stage: In the first stage, the temperature was rapidly raised to 700°C at a heating rate of 3°C / min, and kept for 1.5 hours; in the second stage, the temperature was raised to 1100°C at a heating rate of 3°C / min, and held for 1.5 hours; The heating rate is raised to 1800°C and kept for 15 hours;

[0029] (3) The first cooling treatment: the sapphire wafer after the third stage of the first annealing is cooled to room temperature at 35°C per hour and then released from the furnace;

[0030] (4) Grinding treatment: T...

Embodiment 3

[0035] Embodiment 3: the secondary annealing method of sapphire wafer, its annealing step is as follows:

[0036] (1) Cleaning: firstly clean the sapphire wafer with clean water to remove dust and impurities on the surface;

[0037] (2) The first annealing treatment: Put the cleaned sapphire wafer into the annealing furnace for the first annealing treatment. The first annealing is divided into three stages, including the first stage, the second stage and the third stage: In the first stage, the temperature was rapidly raised to 800°C at a heating rate of 5°C / min, and kept for 2 hours; in the second stage, the temperature was raised to 1200°C at a heating rate of 5°C / min, and kept for 2 hours; in the third stage, the temperature was raised to 5°C / min The heating rate is raised to 1800°C and kept for 20 hours;

[0038] (3) The first cooling treatment: the sapphire wafer after the third stage of the first annealing is cooled to room temperature at 50°C per hour and then released...

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PUM

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Abstract

The invention provides a secondary sapphire wafer annealing method. Primary annealing treatment is performed, machining stress after wafer cutting is eliminated, then the grinding treatment is performed, the sapphire wafer subjected to primary temperature drop treatment is taken out and undergoes two-sided grinding, then second annealing treatment is performed, the sapphire wafer is taken out after annealing, and polishing treatment is performed. The steps are simple, operation is quick and convenient, and the machining stress is decreased through annealing treatment and is more uniformly released. By the adoption of the method, the warping degree of a sapphire wafer finished product subjected to the annealing treatment is lower, the working efficiency is higher, the rate of finished products is higher, and the sapphire wafer finished product can better meet the demands of a manufacturer.

Description

technical field [0001] The invention relates to the technical field of sapphire wafers, in particular to a secondary annealing method for sapphire wafers. Background technique [0002] Sapphire crystal is the most commonly used substrate material for ultra-high brightness blue and white LED luminescent materials GaN, and the crystal quality of GaN epitaxy is closely related to the surface processing quality of the sapphire substrate used, especially the patterned substrate and wafer. The surface morphology and warpage of the wafer are closely related. At the same time, if the warpage of the wafer is too large, when the flat wafer is used for GaN epitaxy, the flat wafer and the epitaxial film will fall off, making it difficult for PSS to focus, which will affect the quality of the epitaxy. During the cutting, double-sided grinding and polishing of sapphire substrates, although part of the processing stress will be released in the next processing step, the release of this stre...

Claims

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Application Information

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IPC IPC(8): C30B33/02C30B29/20
CPCC30B33/02C30B29/20
Inventor 蔡佳霖蔡金荣王晨宇王禄宝
Owner 江苏吉星新材料有限公司
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