Storage apparatus and control method therefor

A storage device and control method technology, applied in information storage, static memory, digital memory information and other directions, can solve the problems of thick number of conductive wires, small number of conductive wires, difficult to reduce the resistance of metal conductive layers, etc. time, the effect of improving efficiency

Active Publication Date: 2016-02-17
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conductive filaments produced by the prior art are too thick and in small quantity, therefore, it is not easy to break the conductive filaments in subsequent operations
Furthermore, the number of conductive filaments produced by the prior art is small, so it is not easy to reduce the impedance of the metal conductive layer

Method used

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  • Storage apparatus and control method therefor
  • Storage apparatus and control method therefor
  • Storage apparatus and control method therefor

Examples

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Embodiment Construction

[0037] figure 1 It is a schematic diagram of the storage device of the present invention. As shown in the figure, the storage device 100 includes a control unit 110 and an array unit 120 . The control unit 110 controls the word line WL 1 ~WL n , bit line BL 1 ~BL m and the source line SL 1 ~SL m The level is used to access the array unit 120. The present invention does not limit the internal architecture of the control unit 110 . As long as the word line WL can be properly controlled 1 ~WL n , bit line BL 1 ~BL m and the source line SL 1 ~SL m A circuit architecture of any level can be used as the control unit 110 . In this embodiment, the control unit 110 includes a column decoder 112 , a row decoder 114 and an access controller 116 .

[0038] Column decoder 112 decodes address information AD 1 , and provide an appropriate level to the word line WL according to the decoding result 1 ~WL n . Row decoder 114 decodes address information AD 2 , and provide an ...

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PUM

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Abstract

The invention provides a storage apparatus and a control method therefor. The storage apparatus comprises a control unit and at least one storage unit. The control unit controls the levels of a word line, a bit line and a source line. The storage unit comprises a transistor and a variable resistor. The gate of the transistor is coupled to the word line. The variable resistor is coupled between the drain of the transistor and the bit line. The source of the transistor is coupled to the source line. During a preset period, the control unit provides a first specific line in a plurality of pulse word lines, bit lines and source lines. The preset period is at least greater than 1 microsecond. According to the storage apparatus, the time for formatting or initializing a resetting operation can be greatly shortened, and the efficiency for formatting or initializing the resetting operation can be improved.

Description

technical field [0001] The present invention relates to a storage device and its control method, in particular to a resistive storage device and its control method. Background technique [0002] At present, new types of volatile memories include ferroelectric memories, phase change memories, magnetic memories and resistive memories. Because resistive memory has the advantages of simple structure, low cost, high speed and low power consumption, it is widely used. In resistive memory, the voltage across a special metal conductive layer is controlled to form conductive filaments in the metal conductive layer. However, the conductive filaments produced by the prior art are too thick and the quantity is small, therefore, it is not easy to break the conductive filaments in subsequent operations. Furthermore, the number of conductive filaments produced by the prior art is small, so it is not easy to reduce the impedance of the metal conductive layer. Contents of the invention ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/12G11C11/56
Inventor 林立伟蔡宗寰林家鸿廖培享
Owner WINBOND ELECTRONICS CORP
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