Storage device and control method thereof

Abstract

The invention provides a storage device and a control method thereof. The storage device includes a control unit and at least one storage unit. The control unit controls the levels of a word line, a bit line and a source line. The memory unit includes a transistor and a variable resistor. The gate of the transistor is coupled to the word line. The variable resistor is coupled between the drain of the transistor and the bit line. The source of the transistor is coupled to the source line. During a preset period, the control unit provides a plurality of pulses to a first specific line among the word line, the bit line and the source line. The preset period is at least greater than 1 microsecond. The invention can greatly shorten the time of formatting or initializing and resetting operations, and improve the efficiency of formatting or initializing and resetting operations.

Description

technical field [0001] The present invention relates to a storage device and its control method, in particular to a resistive storage device and its control method. Background technique [0002] At present, new types of volatile memories include ferroelectric memories, phase change memories, magnetic memories and resistive memories. Because resistive memory has the advantages of simple structure, low cost, high speed and low power consumption, it is widely used. In resistive memory, the voltage across a special metal conductive layer is controlled to form conductive filaments in the metal conductive layer. However, the conductive filaments produced by the prior art are too thick and the quantity is small, therefore, it is not easy to break the conductive filaments in subsequent operations. Furthermore, the number of conductive filaments produced by the prior art is small, so it is not easy to reduce the impedance of the metal conductive layer. Contents of the invention ...

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Problems solved by technology

However, the conductive filaments produced by the prior art are too thick and in small quantity, therefore, it is not easy to break the conductive filaments in subsequent operations

Furthermore, the number of conductive filaments produced by the prior art is small, so it is not easy to reduce the impedance of the metal conductive layer

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