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In-situ growth preparation method for mesoporous composite semiconductor material with high stability

A compound semiconductor, in-situ growth technology, applied in the fields of nanotechnology, chemical instruments and methods, and nanotechnology for materials and surface science, can solve problems such as low catalytic activity, achieve simple and easy preparation process, and optimize design , the novel effect of the method

Active Publication Date: 2016-03-09
中科西卡思(苏州)科技发展有限公司
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  • Application Information

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Problems solved by technology

However, the previously reported catalysts still have problems such as low catalytic activity, therefore, it is urgent to develop new catalyst systems

Method used

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  • In-situ growth preparation method for mesoporous composite semiconductor material with high stability
  • In-situ growth preparation method for mesoporous composite semiconductor material with high stability
  • In-situ growth preparation method for mesoporous composite semiconductor material with high stability

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preparation example Construction

[0024] The invention provides a preparation method for in-situ growth of a mesoporous compound semiconductor material with high catalytic stability.

[0025] The preparation method of the present invention comprises: (1) select one kind to have six-membered ring structure, melting point is lower and can be combined with graphitic carbon nitride (g-C 3 N 4 ) Organic substances that undergo polycondensation reactions, such as barbituric acid, 2,5-dibromopyridine, 2,4-dibromoquinoline, 2,5-dibromopyrimidine, etc., and g-C 3 N 4 The precursors (urea, cyanamide, dicyandiamide) are mixed according to a certain ratio and ground, and the grinding time at room temperature is 10 to 60 minutes;

[0026] (2) The mixture after grinding is heated up to the reaction temperature according to a certain heating rate, such as 4K / min, and calcined to obtain modified graphite-like carbon nitride (mg-C 3 N 4 ) materials, collected for later use;

[0027] (3) Weigh the mg-C obtained by calcinat...

Embodiment 1

[0045] Weigh 3g of cyanamide, add 10mg of 2,5-dibromopyridine, grind for 30 minutes at room temperature, collect it in a mortar, raise the temperature to 650°C at a heating rate of 10K / min, and keep it for 3h. Obtain the modified graphite-like carbon nitride material mg-C 3 N 4 . The amount of ammonium molybdate and thiourea is controlled as 1:1, weigh 20mg ammonium molybdate and corresponding thiourea; weigh mg-C 3 N 4 Material 0.15g, dispersed in 50mL of water, ultrasonic treatment for 10min. The solution was transferred to a hydrothermal kettle and reacted for 12 hours at 120°C. The product was centrifuged, washed with water, and freeze-dried to obtain the final product.

[0046] Figure 1a with Figure 1b For the MoS obtained in Example 1 2 、MoS 2 / mg-C 3 N 4 Scanning electron microscope (SEM) photograph of the compound semiconductor material. It can be seen from the photo that the prepared MoS 2 The material is a nano-flower material.

[0047] Figure 2a wit...

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Abstract

The present invention relates to an in-situ growth preparation method for a mesoporous composite semiconductor material with high stability. The method comprises the following steps: (1) mixing a hexatomic ring solid organic compound with a g-C3N4 precursor in a ratio of 1-50 mg: 1-20 g and grinding; (2) insulating the ground mixture for 2-12 hours at the temperature of 500-750 DEG C, and calcining to obtain a modified graphite-like carbon nitride material; (3) dispersing the modified graphite-like carbon nitride material in a solvent, and adding an MoS2 precursor, and dispersing in an ultrasonic manner, wherein the ratio of the modified graphite-like carbon nitride material, the MoS2 precursor and the solvent is of 0.1-0.5 g: 10-100 mg: 10-50 ml; and (4) transferring the obtained solution into a hydrothermal reactor, reacting for 8-24 hours at the temperature of 120-200 DEG C, cooling, centrifuging and drying to obtain an MoS2 / mg-C3N4 composite semiconductor material.

Description

technical field [0001] The invention provides a mesoporous composite semiconductor material (MoS) with high catalytic stability prepared by a hydrothermal synthesis in situ growth method. 2 / mg-C 3 N 4 ) method, the material prepared by this method not only has high photocatalytic activity, but also has high catalytic stability, and the compound semiconductor material can realize H under the action of visible light irradiation 2 O decomposition to H 2 . The invention belongs to the technical field of catalytic materials and nanometer materials, and relates to a preparation method based on graphite-like carbon nitride mesoporous compound semiconductor materials. Background technique [0002] Transition metal sulfides have a 2D sheet-like structure, with MoS 2 For example, because of its small friction coefficient, diamagnetism, and many active sites, it has been widely used in the fields of solid lubricants, photoconductors, and catalytic chemistry. However, as a metal ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24B01J35/10B82Y30/00
CPCB82Y30/00B01J27/047B01J27/24B01J35/19B01J35/613B01J35/638B01J35/635B01J35/647B01J35/615
Inventor 李孟丽张玲霞杜燕燕吴玫颖王敏施剑林
Owner 中科西卡思(苏州)科技发展有限公司