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A preparation method for in-situ growth of mesoporous compound semiconductor material with high stability

A compound semiconductor and stable technology, which is applied in the direction of nanotechnology, chemical instruments and methods, nanotechnology, etc. for materials and surface science, can solve the problem of low catalytic activity, and achieve simple and easy preparation process, optimized design, The novel effect of the method

Active Publication Date: 2018-03-09
中科西卡思(苏州)科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the previously reported catalysts still have problems such as low catalytic activity, therefore, it is urgent to develop new catalyst systems

Method used

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  • A preparation method for in-situ growth of mesoporous compound semiconductor material with high stability
  • A preparation method for in-situ growth of mesoporous compound semiconductor material with high stability
  • A preparation method for in-situ growth of mesoporous compound semiconductor material with high stability

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preparation example Construction

[0024] The invention provides a preparation method for in-situ growth of a mesoporous compound semiconductor material with high catalytic stability.

[0025] The preparation method of the present invention comprises: (1) select one kind to have six-membered ring structure, melting point is lower and can be combined with graphitic carbon nitride (g-C 3 N 4 ) Organic substances that undergo polycondensation reactions, such as barbituric acid, 2,5-dibromopyridine, 2,4-dibromoquinoline, 2,5-dibromopyrimidine, etc., and g-C 3 N 4 The precursors (urea, cyanamide, dicyandiamide) are mixed according to a certain ratio and ground, and the grinding time at room temperature is 10 to 60 minutes;

[0026] (2) The mixture after grinding is heated up to the reaction temperature according to a certain heating rate, such as 4K / min, and calcined to obtain modified graphite-like carbon nitride (mg-C 3 N 4 ) materials, collected for later use;

[0027] (3) Weigh the mg-C obtained by calcinat...

Embodiment 1

[0045] Weigh 3g of cyanamide, add 10mg of 2,5-dibromopyridine, grind at room temperature for 30 minutes, collect it in a mortar, raise the temperature to 650°C at a heating rate of 10K / min, and keep it for 3h. Obtain the modified graphite-like carbon nitride material mg-C 3 N 4 . The amount of ammonium molybdate and thiourea is controlled as 1:1, weigh 20mg ammonium molybdate and corresponding thiourea; weigh mg-C 3 N 4 Material 0.15g, dispersed in 50mL of water, ultrasonic treatment for 10min. The solution was transferred to a hydrothermal kettle and reacted for 12 hours at 120°C. The product was centrifuged, washed with water, and freeze-dried to obtain the final product.

[0046] Figure 1a and Figure 1b For the MoS obtained in Example 1 2 、MoS 2 / mg-C 3 N 4 Scanning electron microscope (SEM) photograph of the compound semiconductor material. It can be seen from the photo that the prepared MoS 2 The material is a nano-flower material.

[0047] Figure 2a and ...

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Abstract

The invention relates to an in-situ growth preparation method of mesoporous composite semiconductor materials with high stability. The steps include: (1) Mixing six-membered ring solid organic matter and g-C3N4 precursor at a ratio of 1 to 50 mg: 1 to 20 g. Mix and grind in a proportion of Disperse in a solvent, add MoS2 precursor, and disperse ultrasonically, wherein the ratio of the modified graphite-like carbon nitride material, the MoS2 precursor, and the solvent is 0.1 to 0.5 g: 10 to 100 mg: 10 ~50 ml; (4) Transfer the obtained solution to a hydrothermal kettle, react at 120-200°C for 8-24 hours, cool, centrifuge, and dry to obtain MoS2 / mg-C3N4 composite semiconductor material.

Description

technical field [0001] The invention provides a mesoporous composite semiconductor material (MoS) with high catalytic stability prepared by a hydrothermal synthesis in situ growth method. 2 / mg-C 3 N 4 ) method, the material prepared by this method not only has high photocatalytic activity, but also has high catalytic stability, and the compound semiconductor material can realize H under the action of visible light irradiation 2 O decomposition to H 2 . The invention belongs to the technical field of catalytic materials and nanometer materials, and relates to a preparation method based on graphite-like carbon nitride mesoporous compound semiconductor materials. Background technique [0002] Transition metal sulfides have a 2D sheet-like structure, with MoS 2 For example, because of its small friction coefficient, diamagnetism, and many active sites, it has been widely used in the fields of solid lubricants, photoconductors, and catalytic chemistry. However, as a metal ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/24B01J35/10B82Y30/00
CPCB82Y30/00B01J27/047B01J27/24B01J35/19B01J35/613B01J35/638B01J35/635B01J35/647B01J35/615
Inventor 李孟丽张玲霞杜燕燕吴玫颖王敏施剑林
Owner 中科西卡思(苏州)科技发展有限公司