An anti-noise soi transistor photocurrent test system

Abstract

The invention discloses an anti-noise SOI transistor light current test system design. The test system design includes an SOI transistor structure test unit and at least two noise test resistors, the noise test resistors are connected with the SOI transistor structure test unit in series, and two ends of the SOI transistor structure test unit are at least provided with one noise test resistor. According to the anti-noise SOI transistor light current test system design, a large-scale parallel SOI transistor mode is adopted, light current generated under an radiation effect is amplified, and electromagnetic and environmental noise in a laboratory is synchronously measured through symmetrically placed resistor wires; through increase of measurable light current and extraction of the electromagnetic and environmental noise of the laboratory, radiation effect light current of a single SOI transistor can be derived through the measured light current, thereby studying the radiation effect of the transistor; and an effective means is provided for studying a semiconductor radiation effect and designing in a targeted manner.

Description

technical field [0001] The invention belongs to the research field of radiation effects of semiconductor devices, and mainly relates to an anti-noise SOI transistor photocurrent testing system. Background technique [0002] Compared with CMOS process transistors, the SOI process has a smaller induced photocurrent effect under the same radiation effect. How to accurately obtain the photocurrent induced by radiation in SOI transistors has become the current key research content. [0003] At present, the research mainly uses the radiation-induced photocurrent test of a single tube. This method has certain limitations, because the photocurrent induced by a single transistor is very small, and the laboratory environment is noisy. Although strict radiation shielding and protection measures are used, it is difficult to accurately provide the photocurrent induced by the device under radiation. information. It is difficult to meet the needs of scientific researchers for testing and...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the inherent limitation that the photocurrent induced by a single SOI transistor is small and difficult to measure under the radiation condition, and the current laboratory has insufficient environmental noise, the present invention proposes an anti-noise SOI transistor photocurrent test system, which can realize amplified measurement of SOI Transistor photocurrent, and ambient noise can be measured through resistive wires to cancel its effect on the transistor

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