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Method for pre-cutting metal lines of a semiconductor structure

A semiconductor and metal technology used in the field of pre-cut metal wires

Inactive Publication Date: 2019-04-02
GLOBALFOUNDRIES U S INC MALTA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As critical dimensions continue to shrink, this can be challenging

Method used

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  • Method for pre-cutting metal lines of a semiconductor structure
  • Method for pre-cutting metal lines of a semiconductor structure
  • Method for pre-cutting metal lines of a semiconductor structure

Examples

Experimental program
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Embodiment Construction

[0033] Exemplary embodiments will now be described in more detail with reference to the accompanying drawings in which exemplary embodiments are shown. It should be understood that the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0034] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. For example, as used herein, the singular forms "a", "an" and "the" are intended to include plural forms unless the context clearly dictates otherwise. Furthermore, the use of the term "a", etc., does not denote a limitation on quantity, but rather the presence of at least one of the referenced items. It will be further understood that the ter...

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Abstract

The present invention discloses pre-cut metal wires. Specifically, embodiments of the present invention provide a method for cutting sacrificial metal wires in back-end-of-process structures. A sacrificial Mx+1 line is formed over the metal Mx line. A line cut lithography stack is deposited and patterned over the sacrificial Mx+1 line and a cut hole is formed. The cut hole is filled with a dielectric material. The sacrificial Mx+1 line is removed by a selective etch process, protecting the dielectric filled in the cut cavity. Metal is then deposited where the sacrificial Mx+1 line was removed to form a pre-cut metal line. Embodiments of the present invention thus provide pre-cut metal wires and do not require metal cutting. By avoiding the need for metal cutting, the risks associated with metal cutting are also avoided.

Description

technical field [0001] This invention relates generally to semiconductor fabrication and, more particularly, to pre-cut metal wires. Background technique [0002] With the advancement of semiconductor device manufacturing technology, manufacturers have placed more and more components on a chip by increasing the integration density of the semiconductor device. Therefore, the critical dimension (CD) in the design rule gradually decreases as the circuit density increases. [0003] To increase circuit density, it is necessary to reduce the size of components inside the semiconductor device, as well as reduce the length and width of the interconnects that couple the components together. In addition, the impedance of the interconnect must be small enough to switch electronic signals with minimal energy loss within the semiconductor device through the interconnect having a narrow width. [0004] In a typical integrated circuit, there may be many metallization layers and interconn...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76838H01L2221/1068H01L23/522H01L23/5222H01L23/53238H01L23/53295H01L2924/0002H01L21/76897H01L21/32139H01L21/76808H01L21/76816H01L21/7682H01L2924/00H01L21/76877H01L23/5226H01L23/528
Inventor A·C-H·魏G·布什M·A·扎勒斯基
Owner GLOBALFOUNDRIES U S INC MALTA