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Semiconductor light emitting element and optical coupling device

A technology for light-emitting elements and semiconductors, applied in semiconductor devices, electrical components, electrical solid-state devices, etc., and can solve problems such as growth propagation, crystal defects, and light output reduction.

Active Publication Date: 2018-08-31
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are cases where the non-luminescent center becomes a recoupling center due to light absorption, etc., and the growth or propagation of crystal defects occurs, resulting in a decrease in light output

Method used

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  • Semiconductor light emitting element and optical coupling device
  • Semiconductor light emitting element and optical coupling device
  • Semiconductor light emitting element and optical coupling device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Below, while referring to the attached Figure 1 Embodiments of the present invention will be described.

[0016] figure 1 (a) is a schematic plan view of the semiconductor light emitting element of the first embodiment, figure 1 (b) is a schematic cross-sectional view along line A-A.

[0017] The semiconductor light emitting element 50 has a semiconductor substrate 37 , a semiconductor laminate 40 provided on the semiconductor substrate 37 and including a light emitting layer 25 , a first electrode 20 , and a second electrode 42 .

[0018] The first electrode 20 includes a circular pad portion 20a. In addition, the first electrode 20 can further include linear protrusions 20 b in the diagonal direction of the chip. In this way, in a plan view, light can be emitted over a wide area of ​​the light emitting layer 25 to improve light output.

[0019] A second electrode 42 is provided on the back surface of the semiconductor substrate 37 .

[0020] In addition, the ...

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PUM

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Abstract

A semiconductor light-emitting element includes a semiconductor stacked body that includes a light emitting layer in which n well layers (where n is, for example, an integer of 1 to 10) formed of Inx (Ga1-yAly)1-xAs (0<X≦0.2, 0<y<1), and (n+1) barrier layers formed of Ga1-zAlzAs (0<z<1) and are alternately stacked with the well layer. The light emitting layer in some embodiments can emit light having a peak wavelength in a range of from 700 nm or more to 870 nm or less.

Description

[0001] Related applications [0002] This application enjoys the priority of Japanese Patent Application No. 2014-178207 (filing date: September 2, 2014) as the basic application. This application incorporates all the contents of the basic application by referring to this basic application. technical field [0003] Embodiments of the present invention relate to a semiconductor light emitting element and an optical coupling device. Background technique [0004] The optical coupling device emits an optical signal with a wavelength of red light to infrared light from a semiconductor light emitting element, converts it into an electrical signal by a light receiving element such as a silicon (Si) photodiode, and outputs it. Therefore, it is possible to transmit a signal while electrically insulating the input terminal and the output terminal. [0005] The use of optical couplers in industrial equipment, communication equipment, etc. is expanding. [0006] Red light to infrare...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/30H01L31/16
CPCH01L33/06H01L25/167H01L33/30H01L2924/0002H01L2924/00
Inventor 藤本贤冶镰仓孝信
Owner KK TOSHIBA