Reaction chamber

Abstract

The invention provides a reaction chamber. The reaction chamber includes a process cavity, a detection cavity and a conveying device. The process cavity is used for carrying out thin film deposition process of a substrate; the detection cavity is used for detecting the thickness of a thin film deposited on the substrate; and a substrate conveying port is disposed between the process cavity and the detection cavity and used for enabling the connection of the process cavity and the detection cavity and allowing the substrate to pass through, and the conveying device is used for conveying the substrate between the process cavity and the detection cavity through the substrate conveying port. The reaction chamber provided by the invention can be used for detecting the actual thickness of the thin film deposited on the substrate after a process formula is completed and adjusting the process formula to deposit the thin film to a target thickness, so as to improve the yield; and besides, as the way of adjusting the process formula periodically based on a test piece in the prior art is not required, the yield can be improved, the test piece is not required, and the economic efficiency can thus be increased.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to a reaction chamber. Background technique [0002] As the number of transistors in high-efficiency, high-density integrated circuits rises to tens of millions, the signal integration of these huge number of active components requires up to ten layers of high-density metal interconnection lines. These metal interconnection lines Usually, a physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) method is used to deposit a metal thin film. [0003] figure 1 It is a structural schematic diagram of the reaction chamber of the existing PVD equipment. see figure 1 , the reaction chamber 10 includes a target 11 disposed on the top of the reaction chamber, which is connected to a power supply (not shown) disposed outside the reaction chamber 1 to excite the process gas in the reaction chamber to form plasma, A rotating magne...

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Problems solved by technology

[0004] However, the prior art can only periodically adjust the process recipe in the following manner: first, deposit a thin film on the first test piece according to the initial process recipe, and then remove the first test piece from the reaction chamber after the deposition is completed and use other equipment to detect the deposited film. Actual film thickness, and judge whether the actual film thickness is equal to the target thickness, if not, adjust the process formula according to the actual film thickness and target thickness; after that, execute the modified process formula on the second test piece, repeat the above Step until the actual film thickness is equal to the target thickness, the production can be continued according to the current process recipe, which makes the productivity low and consumes test pieces, resulting in low economic benefits; and because the actual film deposited on the substrate cannot be detected after the process recipe is completed Deposit thickness and adjust the process recipe to make it deposit the target thickness, resulting in low yield

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