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Trench MOSFET with omnibearing current extension paths

A current expansion, all-round technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of limited current flow paths, and achieve the effect of reducing on-resistance and increasing current expansion paths.

Active Publication Date: 2016-03-16
北京中科微投资管理有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method only has conductive channels in the longitudinal direction, and the current flow path is quite limited

Method used

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  • Trench MOSFET with omnibearing current extension paths
  • Trench MOSFET with omnibearing current extension paths
  • Trench MOSFET with omnibearing current extension paths

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Embodiment Construction

[0036] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0037] Such as figure 2 As shown, an embodiment of the present invention provides a trench MOSFET with an omnidirectional current spreading path, and the trench MOSFET includes:

[0038] Substrate 101;

[0039] covering the first structural layer 102 within the substrate 101;

[0040] a second structural layer 103 covering the first structural layer 102;

[0041] a third structural layer 104 covering the second structural layer 103;

[0042]...

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Abstract

The invention discloses a trench MOSFET with omnibearing current extension paths. The trench MOSFET comprises a substrate 101; a first structural layer 102 which covers in the substrate 101; a second structural layer 103 which covers in the first structural layer 102; a third structural layer 104 which covers in the second structural layer 103; a source contact hole 108 which is arranged at the top part of the third structural layer 104; a trench 109 which crosses above the third structural layer 104, the second structural layer 103 and the first structural layer 102; a polycrystalline silicon gate electrode 106 which crosses above the third structural layer 104, the second structural layer 103 and the first structural layer 102 and is arranged in the trench 109; a gate dielectric layer 105 which is arranged at the external side wall and the bottom part of the polycrystalline silicon gate electrode 106; a gate contact hole 107 which is arranged at the top part of the polycrystalline silicon gate electrode 106; and an upper surface layer 110 which is formed by the substrate 101, the first structural layer 102, the second structural layer 103 and the third structural layer 104, wherein the substrate 101, the first structural layer 102 and the third structural layer 104 belong to a first conductive type, and the second structural layer 103 belongs to a second conductive type.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a trench MOSFET with an omnidirectional current extension path. Background technique [0002] The vertical MOSFET formed by the vertical double diffusion process is called VDMOSFET, or VDMOS for short. VDMOS (Vertical Double Diffused Field Effect Transistor), as a switching device, is widely used in power supply systems. In order to increase the cell integration density and reduce the on-resistance, a MOSFET structure fabricated by a trench (Trench) process is proposed. Trench process MOSFET replaces the traditional planar process and is widely used in the field of low voltage MOSFET. The traditional trench MOSFET changes the channel area from horizontal to vertical, which makes the cells of the same chip area denser, increases the channel area, and reduces the on-resistance. However, whether it is a horizontal channel of a planar process or a vertical channel of a tren...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423
CPCH01L29/4236H01L29/7813
Inventor 丁艳王立新张彦飞孙博韬
Owner 北京中科微投资管理有限责任公司