Etching method, method of manufacturing article and semiconductor device, and etching solution

Abstract

The present invention provides an etching method, a method of manufacturing an article and a semiconductor device, and an etching solution. The etching method according to an embodiment includes forming a catalyst layer made of a noble metal on a structure made of a semiconductor, and dipping the structure in an etching solution containing hydrofluoric acid, an oxidizer, and an organic additive to remove a portion of the structure that is in contact with the catalyst layer.

Description

[0001] This application claims priority based on Japanese Patent Application No. 2014-185570 filed on September 11, 2014, and seeks the benefits thereof, the entire contents of which are hereby incorporated by reference. technical field [0002] All of the various embodiments described here relate to etching methods, methods of manufacturing articles and semiconductor devices, and etching solutions. Background technique [0003] In the manufacturing process of microstructures including the manufacturing process of MicroElectroMechanicalSystems (MEMS) and Through-Silicon Via (TSV): on a substrate formed of a semiconductor such as silicon (Si), the thickness of several μm The necessity of deep etching technology for forming trenches or via holes at a depth of ~ tens of μm is increasing. [0004] In the etching of semiconductors, isotropic wet etching using etching solutions such as hydrofluoric acid, nitric acid, and acetic acid, and various alkaline solutions such as TetraMet...

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