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Graphene terahertz emitter and manufacturing method thereof

A technology for graphene terahertz transmitters, which is applied in the field of graphene terahertz transmitters and its production, can solve problems such as low emission efficiency, huge post-installed auxiliary equipment, and difficulty in miniaturizing terahertz transmitters, so as to improve emission efficiency. Efficiency, the effect of reducing the size of the equipment

Active Publication Date: 2019-02-05
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the photoconductive antenna can emit milliwatt-level terahertz waves, but its rear auxiliary equipment is huge, and it is difficult to miniaturize the terahertz transmitter
Similarly, nonlinear frequency mixing and vacuum electronic wave tubes are also difficult to achieve miniaturization
Quantum cascade lasers can overcome the above shortcomings and realize the tuning of terahertz waves, but their emission efficiency is low and they need to work in an ultra-low temperature environment

Method used

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  • Graphene terahertz emitter and manufacturing method thereof
  • Graphene terahertz emitter and manufacturing method thereof
  • Graphene terahertz emitter and manufacturing method thereof

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Embodiment Construction

[0038] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0039] figure 1 A schematic structural diagram of a graphene terahertz transmitter provided by an embodiment of the present invention is shown, such as figure 1 As shown, the graphene terahertz transmitter of this embodiment includes: a substrate 11, a graphene nanoribbon 12, a first electrode 13, an insulating l...

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Abstract

The present invention provides a graphene terahertz emitter and a manufacturing method thereof. The graphene terahertz emitter comprises a substrate and also comprises a graphene nanoribbon, a first electrode, an insulation layer, and a second electrode, which are arranged on the substrate in order. The graphene nanoribbon is on the substrate. The first electrode is on partial area of the graphene nanoribbon. The insulation layer is on the graphene nanoribbon and the first electrode. The second electrode is on the insulation layer corresponding to the graphene nanoribbon. The width of the middle part of the graphene nanoribbon is larger than that of the two sides of the graphene nanoribbon. The emission efficiency of terahertz is effectively improved, at the same time, the equipment size is reduced at the same time, and a terahertz wave can be generated under a normal temperature condition.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a graphene terahertz transmitter and a manufacturing method thereof. Background technique [0002] In recent years, terahertz science and technology has received great attention and extensive research from countries around the world, and has achieved remarkable results. Terahertz waves have extensive scientific research value and huge application potential in applied research fields such as medical imaging, material detection, environmental monitoring, mobile communications, satellite communications, and military radar. [0003] Existing terahertz transmitters mainly include: quantum cascade lasers, photoconductive antennas, nonlinear frequency mixing and vacuum electron oscillating tubes. Among them, the photoconductive antenna can transmit milliwatt-level terahertz waves, but its rear auxiliary equipment is huge, and it is difficult to realize the miniaturization of the t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S1/02
CPCH01S1/02
Inventor 李林森郝智彪
Owner TSINGHUA UNIV