Chip, and device and method for removing residual charge in chip
A residual charge and chip technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of inability to completely remove residual charge and inability to completely remove residual charge.
Inactive Publication Date: 2016-03-30
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
However, since the interconnection metal layer in the chip will block the ultraviolet light, it is difficult for the ultraviolet light to irradiate the bottom of the via hole, so that the residual charge accumulated on the surface of the conductive structure in the via hole cannot be completely removed, and thus cannot be completely removed. residual charge on the gate
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[0022] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.
[0023] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates There are features, steps, operations, means, components and / or combinations thereof.
[0024] For the convenience of description, spatially relative terms may be used here, such as "on ...", "over ...", "on the surface of ..."...
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The invention discloses a chip, and a device and a method for removing residual charges in the chip. The device comprises a groove body, a groove cover used for sealing the groove body, and at least one UV lamp arranged on a surface, facing the groove body, of the groove cover, wherein the UV lamp is turned on when the groove cover covers the groove body. The chip comprises a conductive structure, a dielectric layer arranged on the conductive structure, and a through hole formed in the dielectric layer, wherein the through hole is formed by etching the dielectric layer till the conductive structure is exposed, and the residual charges are positioned on the surface of the conductive structure inside the through hole. The method comprises the steps of: pouring a solution into the groove body of the device provided by the invention, and placing at least one chip in the groove body; covering the groove cover of the device on the groove body, and turning on the UV lamp of the device; and carrying out UV light irradiation treatment so that the UV light is refracted onto the surface of the conductive structure inside the through hole via the solution. The device and the method provided by the invention can reduce the residual charges in the chip, thereby improving the reliability of the chip.
Description
technical field [0001] The present application relates to the technical field of semiconductor integrated circuits, in particular, to a device and method for removing residual charge in a chip and a chip. Background technique [0002] In the manufacturing process of the chip, it is usually necessary to deposit a dielectric layer on the conductive structure, then etch the dielectric layer to expose the conductive structure to form a via hole in the dielectric layer, and finally fill the via hole with a metal material to connect the conductive structure . Wherein, the conductive structure may be a gate or an interconnected metal layer electrically connected to the gate. However, residual charges will be generated during the process of forming the conductive structure and etching the dielectric layer, and these residual charges will accumulate on the surface of the conductive structure in the via hole, and the residual charge will eventually be conducted to the gate, so that ...
Claims
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IPC IPC(8): H01L21/02H01L21/768H01L23/528
Inventor 胡昌杰
Owner SEMICON MFG INT (SHANGHAI) CORP