Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Shift register, grid drive circuit and display device

A technology for shift registers and gates, which is applied in the field of gate drive circuits, display devices, and shift registers, and can solve problems such as weak discharge capability of switching transistors, large scanning signal noise, and reduced voltage of pull-down nodes.

Inactive Publication Date: 2016-04-06
BOE TECH GRP CO LTD +1
View PDF6 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the actual operation of the shift register, due to the leakage current of other switching transistors connected to the pull-down node, the voltage of the pull-down node usually decreases, resulting in a weak discharge capability of the switching transistor for discharging the pull-up node, thus The output scanning signal is noisy

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Shift register, grid drive circuit and display device
  • Shift register, grid drive circuit and display device
  • Shift register, grid drive circuit and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0125] by Figure 5b The structure of the shift register shown is taken as an example to describe its working process, wherein, in Figure 5b In the shift register shown, all the switch transistors are N-type switch transistors, and each N-type switch transistor is turned on under the action of a high potential, and is turned off under the action of a low potential; the potential of the reference signal terminal VSS is a low potential, and the corresponding The input and output timing diagram is as follows Figure 7a Shown, specifically, select as Figure 7a There are five stages in the shown input-output timing diagram, the first stage T1 , the second stage T2 , the third stage T3 , the fourth stage T4 and the fifth stage T5 .

[0126] In the first phase T1, Input=1, Reset=0, CK1=1, CK2=0.

[0127] Since Reset=0, both the second switch transistor M2 and the thirteenth switch transistor M13 are turned off; because Input=1, the first switch transistor M1 is turned on; becaus...

Embodiment 2

[0139] by Figure 6b The structure of the shift register shown is taken as an example to describe its working process, wherein, in Figure 6b In the shift register shown, all the switching transistors are P-type switching transistors, and each P-type switching transistor is turned on under the action of a low potential, and is turned off under the action of a high potential; the potential of the reference signal terminal VSS is a high potential, and the corresponding The input and output timing diagram is as follows Figure 7b Shown, specifically, select as Figure 7b There are five stages in the shown input-output timing diagram, the first stage T1 , the second stage T2 , the third stage T3 , the fourth stage T4 and the fifth stage T5 .

[0140] In the first phase T1, Input=0, Reset=1, CK1=0, CK2=1.

[0141] Since Reset=1, both the second switch transistor M2 and the thirteenth switch transistor M13 are turned off; because Input=0, the first switch transistor M1 is turned ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a shift register, a grid drive circuit and a display device. The shift register comprises an input module, a first reset module, a first control module, a second control module, a node voltage control module and an output module which are in cooperation; the node voltage control module and the first control module form a bootstrap circuit, allowing the voltage of a second node to be the same with the voltage of the effective pulse signal of a first clock signal terminal; accordingly, the first control module can timely and effectively work under the control of the second node, allowing the driving signal output terminal of the shift register to timely output the scanning signal opposite to the electric potential of the effective pulse signal of an input signal terminal after output, thereby improving the output stability of the shift register, furthermore reducing the noise of the scanning signal outputted by the driving signal output terminal, and making scanning signal output more stable.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a shift register, a gate drive circuit and a display device. Background technique [0002] With the rapid development of display technology, the display panel is more and more developed towards the direction of high integration and low cost. Among them, the array substrate line drive (GateDriveronArray, GOA) technology integrates the thin film transistor (ThinFilmTransistor, TFT) gate switch circuit on the array substrate of the display panel to form a scan drive for the display panel, so that the gate integrated circuit ( Integrated Circuit (IC) bonding (Bonding) area and fan-out (Fan-out) area wiring space can not only reduce product cost in terms of material cost and manufacturing process, but also make the display panel symmetrical on both sides and narrow frame In addition, this integration process can also save the Bonding process in the direction of the gate scanning lin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G09G3/20G11C19/28
CPCG09G3/20G11C19/28G11C19/184G09G3/3266G09G3/3674G09G2310/0267G09G2310/0286G09G3/2085G09G3/2096G09G2310/0289
Inventor 王飞
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products