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Testing method for embedded flash memory

A test method and embedded technology, applied in the field of memory, can solve the problems of long time consumption, long overall parameter test time of embedded flash memory, long test cycle, etc. Sub-comparison steps, the effect of short test time

Active Publication Date: 2016-04-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] The disadvantage of the above test method is that when testing each parameter such as writing and reading, erasing and reading, crosstalk and reading, each actual measured data value needs to be compared with the preset parameter value Judging whether it is qualified or not, so that the overall parameter test time of embedded flash memory is longer, time-consuming, and test cycle is longer.

Method used

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  • Testing method for embedded flash memory

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Embodiment Construction

[0016] The present invention is described in detail below in conjunction with accompanying drawing:

[0017] figure 1 It is a schematic flow chart of an embodiment of the present invention. Please refer to figure 1 , the testing method of embedded flash memory provided by the present invention, comprises the following steps,

[0018] Step S1, respectively preset the expected value of the test item of the flash memory to be tested; the expected value is a digital signal; wherein, the test item can be increased or decreased according to actual needs, for example: it can be writing, reading, erasing, crosstalk, writing Input and read, erase and read, crosstalk and read, electrical connection performance, power consumption, etc.;

[0019] Step S2, carry out the actual test of the described test item of flash memory at the same time or time-sharing, obtain the actual measured data value; The described actual measured data value is a digital signal; Wherein, carry out the actual ...

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Abstract

The present invention discloses a testing method for an embedded flash memory. The testing method comprises the following steps: respectively presetting expected values of test items of a to-be-tested flash memory; simultaneously or respectively carrying out actual testing on the test items to obtain actually measured data values; storing the actually measured data values in an error trapping memory; carrying out parallel comparison on the actually measured data values and the preset expected values of all the test items in the flash memory one by one so as to determine whether each test item is qualified; when the actually measured data values of the test items are equal to the preset expected values of the preset test items, determining the test items are qualified, or otherwise, determining the test items are unqualified; and determining whether the flash memory is a qualified product, i.e. when all the test items are qualified, determining that the tested flash memory is a qualified product, or determining that the tested flash memory is an unqualified product. The testing method for the embedded flash memory, which is provided by the present invention, has the advantage of enabling the embedded flash memory to have a short test period, short consumed time, short testing time and the like.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to an embedded flash memory testing method. Background technique [0002] Embedded flash memory is used to store electronic data information. Since flash memory is a kind of non-volatile memory, the data will not be lost even if the power is turned off. It has the advantages of repeated erasing, reading, and writing, so it is widely used in mobile phones and digital cameras. , Tablet PCs and other electronic devices. However, before the flash memory is manufactured and leaves the factory, parameters such as electrical connection performance, power consumption, read, write, erase, and crosstalk of the flash memory need to be tested. At present, flash memory testing machines are widely used for testing the above parameters. In the test method of embedded flash memory in the prior art, when writing and reading parameter tests, it is necessary to set the expected value of writing and re...

Claims

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Application Information

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IPC IPC(8): G11C29/56
Inventor 任栋梁钱亮
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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