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Device and method for on-line health management of insulated gate bipolar transistor

A technology of bipolar transistors and bipolar transistors, which can be used in measuring devices, electrical devices, semiconductor working life tests, etc., and can solve problems such as inability to detect IGBT life

Active Publication Date: 2016-04-13
CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide an insulated gate bipolar transistor online health management device and method to solve the technical problem in the prior art that the life of the IGBT cannot be detected during the working process of the IGBT

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  • Device and method for on-line health management of insulated gate bipolar transistor
  • Device and method for on-line health management of insulated gate bipolar transistor
  • Device and method for on-line health management of insulated gate bipolar transistor

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Embodiment Construction

[0034] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.

[0035] An embodiment of the present invention provides an online health management device for an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT for short). Specifically, such as figure 1 As shown, the online health management device includes a sampling module, an extreme value detection module, an electrothermal detection module, a degradation detection module, a life detection mo...

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Abstract

The invention discloses a device for on-line health management of an insulated gate bipolar transistor, and belongs to the technical field of electronic circuits, so as to solve technical problems in the prior art that life of an IGBT cannot be detected in an operating process of the IGBT. The device for on-line health management comprises an electric heating detection module, a degradation detection module, and a life detection module. The electric heating detection module is used to detect junction temperature and temperature rise of the insulated gate bipolar transistor according to operating condition parameters of the insulated gate bipolar transistor, combined with the structure of the insulated gate bipolar transistor. The degradation detection module is used to detect performance degradation degree of the insulated gate bipolar transistor according to the operating condition parameters, the structure of the insulated gate bipolar transistor, and the junction temperature and temperature rise. The life detection module is used to detect consumption life of the insulated gate bipolar transistor according to the performance degradation degree.

Description

technical field [0001] The invention relates to the technical field of electronic circuits, in particular to an online health management device and method for insulated gate bipolar transistors. Background technique [0002] With the advancement of scientific research technology and the improvement of manufacturing technology, insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, referred to as IGBT), as an ideal switching device in the field of power electronics, has been widely used in many key fields such as new energy power generation, locomotive traction, and high-voltage power transmission. middle. With the application of new structures and new processes of power semiconductors, the current density and withstand voltage level of IGBTs are increasing. At the same time, as the volume of IGBTs becomes smaller and smaller, the electrical, mechanical and thermal loads it bears are increasing. Heavy. IGBT will generate a lot of heat under high power operati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2642G01R31/2619G01R31/26G01K7/01G01K2217/00G01R31/2601
Inventor 刘文业杨进锋胡家喜李彦涌罗剑波傅航杰
Owner CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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