Light-emitting diode package structure, light-emitting diode grain and manufacturing method thereof
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as short circuits, affecting the light-emitting effect of light-emitting diode packaging structures, and achieve the effect of enhancing stability
Active Publication Date: 2018-10-26
ZHANJING TECH SHENZHEN +1
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- Summary
- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
However, when the conductive adhesive is deformed by an external force, it is easy to flow and cover the sides of the LED die, causing a short circuit in the internal structure of the LED die, thereby affecting the luminous efficacy of the molded LED package structure.
Method used
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Embodiment Construction
[0015] see figure 1 , is a preferred embodiment of the LED packaging structure 100 of the present invention. The LED packaging structure 100 includes a first pin 11 and a second pin 12 spaced apart from each other, an insulator 20 , a reflective cup 30 , a LED chip 40 and a packaging layer 50 .
[0016] Specifically, both the first pin 11 and the second pin 12 have flat surfaces. Both the first pin 11 and the second pin 12 are made of metal. In this embodiment, the two first pins 11 and the second pins 12 are made of copper (Cu).
[0017] The insulator 20 is interposed between the first pin 11 and the second pin 12 to electrically isolate the first pin 11 and the second pin 12 . The upper and lower surfaces of the insulator 20 are flush with the upper and lower surfaces of the first pin 11 and the second pin.
[0018] The reflective cup 30 is formed on the first pin 11 and the second pin 12 . The inner surface of the reflective cup 20 can be formed with highly reflective ...
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The present disclosure provides a light emitting diode die which includes a substrate; an N type semiconductor layer, an active layer, and a P type semiconductor layer formed on the substrate in sequence; at least one recess, and a pair of electrodes. The recess extends to the N type semiconductor layer. The insulating layer covers the all of side surfaces of the N type semiconductor layer, the active layer, the P type semiconductor layer, and covers top of the P type semiconductor layer except an opening on the P semiconductor layer. One of the electrodes is filled in the recess and electrically connected to the N type semiconductor layer, and the other one of the electrodes is connected to the P type semiconductor layer in the opening. The present disclosure further provides an LED package having the LED die and a method for manufacturing the same.
Description
technical field [0001] The invention relates to a semiconductor element, in particular to a light emitting diode (LED) crystal grain and a packaging structure with the light emitting diode crystal grain. Background technique [0002] A light-emitting diode is an optoelectronic semiconductor element that converts electrical current into a specific wavelength range. Light-emitting diodes can be widely used as light sources in the field of lighting because of their advantages such as high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life. [0003] The existing LED packaging structure generally includes two pins spaced apart from each other, and the LED dies arranged on the two pins. The light-emitting diode crystal grain includes a substrate, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer and two electrodes respectively arranged on the N-type semiconductor layer a...
Claims
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IPC IPC(8): H01L33/20H01L33/44H01L33/62H01L33/00
CPCH01L33/382H01L33/387H01L33/44H01L33/486H01L2933/0016
Inventor 张超雄林厚德陈滨全陈隆欣曾文良
Owner ZHANJING TECH SHENZHEN