Method for forming semiconductor structure

Abstract

A method for forming a semiconductor structure comprises the following steps: providing a substrate; forming gate structures on the surface of the substrate; forming an initial stress layer on the surface of the substrate on the two sides of the gate structures, wherein the material of the initial stress layer is amorphous; forming a cover stress layer on the surface of the initial stress layer; and after the cover stress layer is formed, converting the material of the initial stress layer into a crystalline material through a solid-phase process, and forming a source and drain stress layer. The morphology and the performance of the formed semiconductor structure are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. Transistors are currently being widely used as the most basic semiconductor devices, so as the component density and integration of semiconductor devices increase, the gate size of transistors becomes smaller than before (. However, the smaller gate size of transistors will Make transistor produce short channel effect, and then produce leakage current, finally affect the electrical performance of semiconductor device.At present, prior art mainly improves semiconductor device performance by improving carrier mobility.When the mobility of carrier improves, transistor If the driving current is increased, the leakage current ...

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Problems solved by technology

[0004] However, the stress layer formed in the source and drain regions of the transistor by the existing process can no longer

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