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Integrated Inductor Structure

A technology integrating inductance and inductance, applied in the direction of inductors, fixed inductors, fixed signal inductors, etc., can solve the problem of quality factor Q decrease, and achieve the effect of reducing parasitic capacitance, improving quality factor, and improving symmetry

Active Publication Date: 2019-03-15
REALTEK SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Under the influence of the skin effect, the metal cross-section through which the current flows becomes smaller, so it will feel a larger resistance, resulting in a decrease in the quality factor Q

Method used

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  • Integrated Inductor Structure
  • Integrated Inductor Structure
  • Integrated Inductor Structure

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Embodiment Construction

[0042] The technical terms in the following explanations refer to the customary terms in this technical field. If some terms are explained or defined in this manual, the interpretation of these terms shall be based on the descriptions or definitions in this manual.

[0043] The disclosed content of the present invention includes an integrated inductor structure, which can improve the quality factor Q and bandwidth of the integrated inductor. On the premise that implementation is possible, those skilled in the art can select equivalent components to implement the present invention according to the disclosure of this specification, that is, the implementation of the present invention is not limited to the embodiments described later. Since some of the components included in the integrated inductor structure of the present invention may be known components individually, the details of the known components will be omitted in the following description without affecting the full disc...

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Abstract

The invention discloses an integrated inductor structure comprising an external metal line segment which contains a first sub metal line segment and a second sub metal line segment, an internal metal line segment which is disposed in an area surrounded by the external metal line segment and contains a third sub metal line segment and a fourth sub metal line segment, and at least one connecting structure which is used for connecting the external metal line segment and the internal metal line segment, wherein the first sub metal line segment corresponds to the third sub metal line segment, the first and third sub metal line segments belong to different metal layers on a semiconductor structure, the second sub metal line segment corresponds to the fourth sub metal line segment, and the second and fourth sub metal line segments belong to different metal layers on the semiconductor structure.

Description

technical field [0001] The present invention relates to integrated inductor structures, and more particularly to integrated inductor structures that provide quality factor Q, large bandwidth, and good symmetry. Background technique [0002] An on-chip inductor is an integrated inductor structure, usually in a spiral shape. see figure 1 , which is an existing asymmetric spiral inductor. The asymmetric spiral inductor 100 includes a spiral metal wire segment 110 (light gray part) and a metal wire segment 120 (dark gray part). The metal line segment 110 and the metal line segment 120 belong to different metal layers in the semiconductor structure, figure 1 In the example, the metal line segment 110 is on the upper layer and the metal line segment 120 is on the lower layer. The metal wire segment 110 and the metal wire segment 120 are connected to each other through the connection structure 130 . The connection structure 130 is, for example, a via structure in a semiconduct...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/01H01F17/00
Inventor 颜孝璁简育生叶达勋
Owner REALTEK SEMICON CORP