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A kind of cake structure 3d NOR memory and its forming method

A memory and cake technology, applied in the field of memory, can solve the problems of low storage density and insufficient space utilization, and achieve the effects of high storage density, good space utilization, and high space utilization

Active Publication Date: 2018-12-07
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The storage density of the BiCS structure has been greatly improved compared with the storage unit of the planar structure, but the space utilization rate is insufficient and the storage density is not high.

Method used

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  • A kind of cake structure 3d NOR memory and its forming method
  • A kind of cake structure 3d NOR memory and its forming method
  • A kind of cake structure 3d NOR memory and its forming method

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Embodiment Construction

[0021] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0022] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner" and "outer" are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and Simplified descriptions, rather than indicating or implying that the device or element refe...

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PUM

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Abstract

The invention discloses a method for forming a 3D NOR type memory with a cake structure, comprising the following steps: S1: doping a silicon substrate on a silica gel sheet to prepare a silicon substrate; S2: sequentially depositing an isolation layer and a gate dielectric layer on the silicon substrate ; S3: vertically etch a plurality of holes on the gate dielectric layer and the isolation layer, the lower ends of the plurality of holes are flush with the upper surface of the silicon substrate; S401: from the plurality of holes Deposit ONO layers in the circumferential direction from the inner wall to the center of the hole; S402: Deposit polysilicon from the center of the holes to fill the holes; S403: Fill the holes at the mouths of the holes Both are planarized; S5: etching the isolation layer and the gate dielectric layer to form steps and isolation grooves; and S6: setting a gate electrode on the steps. The invention has the following advantages: high space utilization rate and high storage density.

Description

technical field [0001] The invention relates to the field of memory, and specifically designs a cake-structured 3D NOR memory and a forming method thereof. Background technique [0002] As the process size shrinks, the storage density based on the planar structure increases, and the corresponding manufacturing cost becomes higher and higher, so a three-dimensional storage structure is produced. [0003] The BiCS structure is a 3D NAND flash structure that has been extensively studied. The storage density of the BiCS structure has been greatly improved compared with the storage unit of the planar structure, but the space utilization rate is insufficient, and the storage density is not high. Contents of the invention [0004] The present invention aims to solve at least one of the above-mentioned technical problems. [0005] Therefore, the first object of the present invention is to provide a method for forming a cake-structured 3D NOR memory. [0006] The second object o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H10B69/00H10B41/20H10B41/30H10B43/20H10B43/30
CPCH10B41/10H10B41/00H10B69/00H10B41/20
Inventor 邓宁吴华强丰伟钱鹤舒清明朱一明
Owner TSINGHUA UNIV