DRAM (dynamic random access memory) neutron single event effect test method

Abstract

The invention provides a DRAM (dynamic random access memory) neutron single event effect test method. The DRAM neutron single event effect test method comprises the steps of S1, configuring the DRAM, writing an initial value in the DRAM, and performing backward reading on the writing value in the DRAM to obtain a first backward reading result; S2, performing irradiation, after first preset fluence is irradiated, performing backward reading on the writing value in the DRAM to obtain a second backward reading result; and comparing the second backward reading result with the first backward reading result to make statistics on the number of occurred errors; and S3, repeatedly performing the step S2, and stopping the test until the statistical number of the occurred errors achieves a preset number of errors or the total fluence of the current irradiation achieves a second preset fluence. The DRAM neutron single event effect test method can perform test on the DRAM neutron single event effect, and the accuracy of the test result can be improved.

Description

technical field [0001] The invention relates to the technical field of single event effect test, in particular to a DRAM neutron single event effect test method. Background technique [0002] DRAM (Dynamic Random Access Memory, dynamic random access memory) is the key core device of airborne electronic equipment. This type of device will encounter about 300-18,000 1MeV-1000MeV high-energy atmospheres per square centimeter per hour at a flight altitude of 3km-20km Neutrons produce single-event effects, which induce airborne electronic equipment to produce atmospheric neutron single-event soft errors and hard faults, bringing safety hazards to airborne electronic equipment. [0003] In order to improve the safety of airborne electronic equipment, it is necessary to test the neutron single event effect of DRAM in advance. At present, neutrons with 14 MeV energy are used in China to conduct ground simulation tests on DRAM to obtain sensitive cross-section data. In order to ensur...

AI Technical Summary

Problems solved by technology

[0002] DRAM (Dynamic Random Access Memory, dynamic random access memory) is the key core device of airborne electronic equipment. This type of device will encounter about 300-18000 1MeV-1000MeV high-energy atmospheres per square centimeter per hour at a flight altitude of 3km-20km Neutrons, which produce single event effects, induce airborne electronic equipment to produce atmospheric neutron single event soft errors and hard faults, bringing safety hazards to airborne electronic equipment

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