Bipolar junction transistor and related manufacturing method thereof

Abstract

The invention provides a bipolar junction transistor and a related manufacturing method thereof. According to the embodiment provided by the invention, the bipolar junction transistor comprises a first buried layer, a first epitaxial layer, a second epitaxial layer, a PNP bipolar junction transistor unit, an NPN bipolar junction transistor unit and a first isolating structure, wherein the first buried layer is formed in a semiconductor substrate; the first epitaxial layer and the second epitaxial layer are formed on the first buried layer; the PNP bipolar junction transistor unit, the NPN bipolar junction transistor unit and the first isolating structure are fabricated in the first epitaxial layer and the second epitaxial layer; the first isolating structure is located between the PNP bipolar junction transistor unit and the the NPN bipolar junction transistor unit and are connected with the first buried layer to form an isolating barrier. The isolating barrier not only can effectively isolate the PNP bipolar junction transistor unit from the NPN bipolar junction transistor unit, but also can effectively isolate the PNP bipolar junction transistor unit and the NPN bipolar junction transistor unit from the semiconductor substrate, and prevents a charge carrier from being injected into the substrate and a parasitic BJT from being formed.

Description

technical field [0001] Embodiments of the present disclosure relate to semiconductor devices, particularly but not limited to bipolar junction transistors and methods of manufacturing the same. Background technique [0002] Existing vertical bipolar junction transistors (BJTs) usually have poor isolation performance from the substrate or well region, which will cause unwanted carrier injection into the substrate and formation of parasitic BJTs. In order to improve the isolation performance, it is usually necessary to make a deep buried layer to completely surround the vertical BJT, but this requires an additional mask layer and a more complicated manufacturing process to make the deep buried layer. It is relatively difficult to realize and the production cost is high. In addition to the isolation performance and production cost, it is also hoped that the amplification factor (usually expressed by β) of the BJT is relatively high. Contents of the invention [0003] To sol...

AI Technical Summary

Problems solved by technology

[0002] Existing vertical bipolar junction transistors (BJT) usually have poor isolation performance from the substrate or well region, which will cause unwanted carrier injection into the substrate and the formation of parasitic BJTs

In order to improve the isolation performance, it is usually necessary to make a deep buried layer to completely surround the vertical BJT, but this requires an additional mask layer and a more complicated manufacturing process to make the deep buried layer

Relatively difficult to implement and expensive to produce

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