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Shield gate groove type field effect transistor and preparation method thereof

A field effect transistor and shielded gate technology, applied in the field of shielded gate trench type field effect transistor and its preparation, can solve problems such as transistor avalanche failure, and achieve the effects of inhibiting turn-on and improving avalanche tolerance

Pending Publication Date: 2022-03-04
无锡先瞳半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when the traditional SGT forward high voltage is blocked or forward high voltage is turned on, the SGT is prone to generate a hole current due to the avalanche effect. avalanche failure

Method used

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  • Shield gate groove type field effect transistor and preparation method thereof
  • Shield gate groove type field effect transistor and preparation method thereof
  • Shield gate groove type field effect transistor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] When the traditional SGT forward high voltage is blocked or forward high voltage is turned on, the SGT is prone to generate hole current due to the avalanche effect, and the hole current flowing through the channel of the substrate region will cause the parasitic transistor to turn on. The turn-on of the parasitic triode will lead to avalanche failure of the transistor.

[0053] In view of the above problems, the embodiment of the present application provides a shielded gate trench type field effect transistor, which can suppress the turn-on of the parasitic transistor in the SGT before the avalanche failure of the SGT occurs.

[0054] The technical solutions of the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0055] figure 1 It is a schematic structural diagram of a shielded gate trench type field effect transistor shown in an embodiment of the present application;

[0056] figure 2Yes figure 1...

Embodiment 2

[0076] Based on the first embodiment above, the embodiment of the present application provides another shielded gate trench field effect transistor, which can effectively guide the hole current into the base region and flow into the P-type source region 41 more uniformly when an avalanche occurs.

[0077] The technical solutions of the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0078] see figure 1 and figure 2 , the shielded gate trench field effect transistor, comprising:

[0079] Substrate region 1, drift region 2, base region 3, source region 4, trench region 5, source 7 and drain 6;

[0080] The drift region 2 is in contact with the substrate region 1, and the direction in which the substrate region 1 points to the drift region 2 is upward,

[0081] The base region 3 and the source region 4 are sequentially arranged above the drift region 2;

[0082] The trench region 5 is disposed on the side of...

Embodiment 3

[0093] Corresponding to the aforementioned shielded gate trench field effect transistor and its embodiments, the present application also provides a method for manufacturing a shielded gate trench field effect transistor and corresponding embodiments.

[0094] Figure 4 It is a schematic flow chart of the manufacturing method of the shielded gate trench field effect transistor shown in the embodiment of the present application.

[0095] see Figure 4 , the preparation method of the shielded gate trench type field effect transistor, comprising:

[0096] 401. Prepare a substrate region with a semiconductor material;

[0097] In the embodiment of the present application, the substrate region is prepared with an N-type heavily doped semiconductor material, that is, the doping type of the substrate region is N-type doping, and the doping concentration of the substrate region is a heavily doped concentration.

[0098] In the embodiment of the present application, the semiconducto...

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Abstract

The invention relates to a shield gate trench type field effect transistor, which comprises a substrate region, a drift region, a matrix region, a source region, a trench region, a drain electrode and a source electrode, the drift region is connected with the substrate region, and the base region and the source region are sequentially arranged above the drift region by taking the direction of the substrate region pointing to the drift region as the upper part; the trench region is arranged on the side of the base body region and is connected with the drift region, the base body region and the source region respectively; the trench region comprises a shield gate, a control gate, an insulating layer and a metal gate; the source region consists of a P-type source region and an N-type source region, and the P-type source region and the N-type source region are arranged in parallel and are respectively connected to the trench region; and the shield grid is connected with the drift region. When avalanche breakdown occurs, hole current can be directly injected into the P-type source region along the side edge of the groove region, the moving path of the hole current is shortened, starting of a parasitic triode is inhibited, and avalanche tolerance is improved.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a shielded gate trench type field effect transistor and a preparation method thereof. Background technique [0002] Shielded gate trench field effect transistors (Split Gate Trench, SGT) have been widely used in important low-voltage fields such as power management. SGT has high channel density and good charge compensation effect. In addition, its shielded gate structure significantly reduces transfer capacitance by effectively isolating the coupling from the control gate to the drain. [0003] Therefore, SGT has lower specific on-resistance, smaller conduction loss and switching loss, and higher operating frequency. [0004] However, when the traditional SGT forward high voltage is blocked or forward high voltage is turned on, the SGT is prone to generate a hole current due to the avalanche effect. An avalanche failure occurred. [0005] Therefore, in order ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/423H01L29/78H01L21/336
CPCH01L29/0611H01L29/0684H01L29/4236H01L29/7827H01L29/7831H01L29/66666H01L29/66484
Inventor 张子敏王宇澄虞国新吴飞钟军满
Owner 无锡先瞳半导体科技有限公司
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