Press rings, carrying devices and semiconductor processing equipment

Abstract

The invention provides a press ring, a bearing apparatus and a semiconductor processing device. The press ring cooperates with a chuck for application so as to fix a substrate on the chuck. The press ring comprises a press ring body and an auxiliary member made of an insulation material. The auxiliary member comprises a first portion and a second portion, wherein the first portion is used for laminating an edge area of the upper surface of the substrate, and a first gap exists between the portion, which is close to the center area of the substrate, of the first portion and the substrate; and the second portion projects towards the lower surface of the substrate and is arranged between the press ring body and the outer side of the side wall of the substrate. The press ring, the bearing apparatus and the semiconductor processing device, provided by the invention, can solve the problem of a sparking phenomenon and can also solve the problem of a piece bonding phenomenon.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to a pressure ring, a carrying device and semiconductor processing equipment. Background technique [0002] Through silicon via technology (hereinafter referred to as TSV) technology is the latest technology to realize the interconnection between chips by making vertical conduction between chips and between wafers. Since TSV technology can make Chips are stacked in the three-dimensional direction with the highest density, the shortest interconnection between chips, the smallest size, and greatly improved chip speed and low power consumption performance. It has become the most advanced technology in electronic packaging technology. [0003] TSV technology includes the process of depositing a barrier layer and a copper seed layer in a through-silicon via using a magnetron sputtering device, figure 1 Schematic diagram of the magnetron sputtering equipmen...

AI Technical Summary

Problems solved by technology

However, since the metal film deposited in the TSV technology is relatively thick, the sticking phenomenon between the pressure jaw 121 and the substrate S is prone to occur, which makes the part of the metal film in contact with the pressure jaw 121 tear when the substrate S is separated from the pressure jaw 121. It may even cause the substrate S to be broken, therefore, some of the pressing jaws 12 in the plurality of pressing jaws 121 adopt such as Figure 4 The structure of the pressing jaw 121 shown, wherein, there is a distance between the lower surface of the pressing jaw 121 near the central region of the substrate S and the upper surface of the substrate S, so as to avoid deposition of metal atoms and ions in the gap formed by the spacing, thereby It is possible to avoid the sticking of the position where the pressing jaws and the substrate are in contact, but, since part of the pressing jaws 121 still adopts such as image 3 Jaws shown, so there will still be some degree of sticking

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