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A measuring method of channel hole

A measurement method and channel technology, applied in measurement devices, instruments, and the use of wave/particle radiation, etc., can solve the problems of high cost, time-consuming and laborious, and low measurement efficiency, and achieve the effect of rapid measurement

Active Publication Date: 2019-04-30
WUHAN XINXIN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional method is to measure the channel hole size of a layer after chemical mechanical polishing, and then measure again after chemical mechanical polishing. This measurement method is time-consuming and laborious, with low measurement efficiency and high cost.

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  • A measuring method of channel hole
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Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings.

[0028] Such as figure 1 and figure 2 As shown, this embodiment proposes a measurement method for the size of the channel hole, which is applied to each film layer in the semiconductor structure (this embodiment takes the three-dimensional memory 1 as an example, but it should not be understood as a limitation of the present invention) (not shown and labeled in the accompanying drawings, the number of film layers is not limited, preferably 39 layers), the measurement of the size of the channel hole 2, the semiconductor structure includes a semiconductor substrate (not shown and labeled in the accompanying drawings) and a stack For several layers on a semiconductor substrate, the measurement method includes:

[0029] A three-dimensional memory 1 provided with several film layers is provided, and channel holes 2 penetrating through each film layer are formed in the thr...

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Abstract

The present invention relates to the field of semiconductors, in particular to a method for measuring the size of channel holes in each film layer in a semiconductor structure. eclipse to form a slope surface for measurement, and then use the testing instrument to scan the slope surface to obtain a planar porous map, and then determine the film layer corresponding to each channel hole in the planar porous map. According to the planar porous map, obtain each The size of the channel hole in the film layer realizes the rapid measurement of the channel hole size in each film layer.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for measuring channel holes. Background technique [0002] Three-dimensional memory uses a multi-layer stacking method to increase storage density, and the number of film layers in mainstream products has reached 39 layers. The size of the channel hole directly affects the characteristics of the memory cell, and the size of the channel hole in each layer of the 39 layers becomes the most critical factor for the product to meet the design requirements. How to quickly detect the size of the channel holes in each layer is an urgent technical problem to be solved. The traditional method is to measure the channel hole size of a layer after chemical mechanical polishing, and then measure again after chemical mechanical polishing. This measurement method is time-consuming, laborious, and has low measurement efficiency and high cost. Contents of the invention [0003] In view o...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B15/00
CPCG01B15/00
Inventor 夏志良徐强霍宗亮梅绍宁
Owner WUHAN XINXIN SEMICON MFG CO LTD