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Method and device for self-adaptive adjustment of chip memory write operation timing path

A technology of self-adaptive adjustment and writing operation, which is applied in the direction of instrumentation, electrical digital data processing, etc., can solve the problem of long data path delay, etc., and achieve the effect of increasing the operating frequency

Active Publication Date: 2018-09-28
FUZHOU ROCKCHIP SEMICON
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, due to the complexity of the SRAM storage circuit, and in terms of function, it is required to complete the operation at the next clock beat when the command is received, so when the chip frequency increases rapidly, the writing speed of the SRAM obviously becomes the key to limit the chip frequency. path
The current timing path is from SRAM command collection to SRAM internal fetching and output to the SRAM port, and then to the unit that issued the command to complete the data sampling (especially when there are many modules mounted on the bus, the data path of the SRAM returning to the command initiator will be is very long and causes a large delay)

Method used

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  • Method and device for self-adaptive adjustment of chip memory write operation timing path

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Embodiment Construction

[0015] The self-adaptive adjustment method for the chip memory write operation timing path of the present invention comprises the following steps:

[0016] After the chip initialization is completed, it starts to work and generates a working clock;

[0017] Judging the working clock frequency according to the low-frequency clock input by the chip and the working clock;

[0018] The write control memory unit outputs a write command and write data to the memory unit to perform a write operation, and at the same time, after one working clock cycle of the write command, the original write completion indicator bit is set to be effective;

[0019] According to the received write command, write data and working clock, the memory unit outputs the original writing completion indication bit after the write command is sampled by the working clock, and after the delay time of the write action inherent in the circuit;

[0020] The original write completion indicator is respectively delaye...

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Abstract

The invention provides a self-adaption adjustment method and device for the write operation timing path of a chip storage. A write control storage unit outputs a write command and write data to a storage unit for reading operation, and the original write completion indication position is set to be valid one cycle after the write command. The storage unit outputs the original write completion indication position. The original write completion indication position is delayed by one cycle through one-stage delaying and delayed by two cycles through two-stage delaying so that a write completion indication position delayed by one cycle and a write completion indication position delayed by two cycles can be obtained. The access selection operation is conducted according to the judgment result of the work clock frequency, one path of three input paths including the original write completion indication position, the write completion indication position delayed by one cycle and the write completion indication position delayed by two cycles is selected as a write completion indication position, and therefore the write operation timing path is automatically adjusted according to the running frequency.

Description

technical field [0001] The invention relates to a method and device for self-adaptive adjustment of a chip memory write operation sequence path. Background technique [0002] With the development of SOC chip technology, users have higher and higher requirements for chip performance. Since the operating frequency of the chip directly affects the performance, the main frequency of the chip is getting higher and higher. At the same time, due to the complexity of the SRAM storage circuit, and in terms of function, it is required to complete the operation at the next clock beat when the command is received, so when the chip frequency increases rapidly, the writing speed of the SRAM obviously becomes the key to limit the chip frequency. path. The current timing path is from SRAM command collection to SRAM internal fetching and output to the SRAM port, and then to the unit that issued the command to complete the data sampling (especially when there are many modules mounted on the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F13/16
CPCG06F13/161
Inventor 廖裕民江显舟
Owner FUZHOU ROCKCHIP SEMICON
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