A Low Power Monolithic Integrated Broadband Low Noise Amplifier

Abstract

The invention discloses a low-power monolithic integrated broadband low noise amplifier, which comprises an input matching unit, a signal amplification unit and an output driving unit, wherein a single-ended radio-frequency input signal RFin is input into the input matching unit; the single-ended radio-frequency input signal RFin in the input matching unit completes 50ohm input matching and converts an input radio-frequency voltage signal into a radio-frequency current signal; the radio-frequency current signal is coupled to the signal amplification unit through the input matching unit; the signal amplification unit amplifies the input radio-frequency current signal and converts the input radio-frequency current signal to the radio-frequency voltage signal; the amplified radio-frequency voltage signal is coupled to the output driving unit through the signal amplification unit; and the output driving unit further amplifies the input radio-frequency voltage signal and outputs a radio-frequency signal RFout. According to the low-power monolithic integrated broadband low noise amplifier, the power consumption can be greatly reduced, the power gain is improved, the noise factor is reduced, the linearity is high, the isolation is good, all components can be realized on chip, the peripheral circuit components are reduced, the cost is reduced, and the low-power monolithic integrated broadband low noise amplifier can be applied to a broadband radio-frequency transceiver.

Description

technical field [0001] The invention belongs to the technical field of amplifiers, in particular to a low-power single-chip integrated broadband low-noise amplifier. Background technique [0002] Common-gate structure amplifiers are widely used in the design of broadband low-noise amplifiers. The main reason is that their input matching has broadband characteristics. Traditional common-gate structure amplifier circuits such as figure 1 shown. The signal is input from the source of transistors M1 and M2. By adjusting the width-to-length ratio of M1 and M2 and the gate bias voltage, the magnitude of the current flowing through M1 and M2 can be adjusted, thereby changing the transconductance g of M1 and M2. m , so that its input impedance matches the 50 ohm antenna or transmission line. Different voltage gains can be obtained by adjusting the resistance values ​​of the load resistors R1 and R2. This structure has wide input bandwidth and gain bandwidth. However, the traditi...

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Problems solved by technology

[0004] The second is the low gain. The gain of the traditional common-gate structure amplifier largely depends on the load impedance, but the large resistance load will bring too much voltage drop, reducing the voltage margin and linearity; and the large inductance load Inductors both increase the chip area and cause the circuit to exhibit narrow-band gain characteristics

[0005] The third is poor isolation. Due to the poor isolation of traditional common-gate structure amplifiers, this will cause the output signal to return to the input, which is difficult to apply to applications that require high isolation indicators.

[0006] Finally, the noise is large. The noise figure of the broadband amplifier using the traditional common gate structure is relatively large, often exceeding 4dB.

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