Array substrate and array substrate making method

Abstract

The invention provides an array substrate and an array substrate making method. The array substrate comprises a plurality of low temperature polycrystalline silicon thin film transistors that are distributed in such a way that an array is formed. Each low temperature polycrystalline silicon thin film transistor comprises a substrate, a low temperature polycrystalline silicon layer, a first insulating layer, a grid electrode, a second insulating layer, a source electrode and a drain electrode, wherein the low temperature polycrystalline silicon layer, the first insulating layer, the grid electrode and the second insulating layer are orderly arranged on the same side of the substrate; the source electrode and the drain electrode are arranged on the second insulating layer; the first insulating layer is provided with a first through hole and a second through hole; the second insulating layer is provided with a third through hole and a fourth through hole, the third through hole corresponds to the first through hole, the fourth through hole corresponds to the second through hole; one end of the source electrode contacts with a part, positioned far away from the grid electrode, of a surface of the second insulating layer; the source electrode is connected with one end of the low temperature polycrystalline silicon layer via the first through hole and the third through hole; one end of the drain electrode contacts with a part, positioned far away from the grid electrode, of a surface of the second insulating layer; the drain electrode is connected with the other end of the low temperature polycrystalline silicon layer via the second through hole and the fourth through hole; the second insulating layer is a silicon oxide layer.

Description

technical field [0001] The invention relates to the display field, in particular to an array substrate and a method for preparing the array substrate. Background technique [0002] A display device, such as a liquid crystal display (Liquid Crystal Display, LCD) is a commonly used electronic device, and is favored by users because of its low power consumption, small size, and light weight. With the development of flat panel display technology, the demand for liquid crystal displays with high resolution and low energy consumption has been raised. The electron mobility of amorphous silicon is low, and low temperature polysilicon (LowTemperaturePloy-silicon) can be produced at low temperature, and has higher electron mobility than amorphous silicon. Secondly, CMOS devices made of low-temperature polysilicon can be applied to make liquid crystal displays have higher resolution and low energy consumption. Therefore, low-temperature polysilicon has been widely used and researched...

AI Technical Summary

Problems solved by technology

At present, the silicon oxide layer and the silicon nitride layer are formed twice, and the process is relatively complicated.

Moreover, equipment conversion is required between two film formations, resulting in a waste of time and a reduction in production efficiency

Further, there is a risk of introducing impurities between two film formations. When impurities are introduced between two film formations, the performance of low-temperature polysilicon thin film transistors will be reduced.

Images