Measuring device and method for nanowire piezoelectric coefficient d33

Abstract

The invention discloses a measurement device and a measurement method for the piezoelectric coefficient d33 of a nanowire. The measuring device is connected with a horizontally placed nanowire (1). The measurement device comprises an electrode unit (2) for being connected with two contact points of the nanowire (1) so as to enable the potentials at the two contact points of the nanowire to be equal to each other; a displacement detection unit (3) used for getting in contact with any position between the two contact points of the nanowire; and a signal processing unit (4). When the voltage difference exists between the displacement detection unit (3) and the electrode unit (2), the displacement detection unit (3) detects the lateral displacement of the nanowire (1). The signal processing unit (4) is respectively connected to the electrode unit (2) and the displacement detection unit (3) and is used for obtaining the piezoelectric coefficient of the nanowire according to the voltage difference between the displacement detection unit and the electrode unit and the lateral displacement of the nanowire. According to the technical scheme of the invention, by means of the measurement device for the piezoelectric coefficient of the nanowire, the constraint of lead electrodes at the two ends of the nanowire can be avoided, and the measurement accuracy is improved.

Description

technical field [0001] The present invention relates to a measurement technique, in particular to a nanowire piezoelectric coefficient d 33 Measuring device and measuring method. Background technique [0002] With the rapid development of nanotechnology, people's research on nanowires has become more and more extensive. Nanowires not only have excellent mechanical properties, high specific surface area and quasi-one-dimensional properties, but also have excellent optical, electrical, magnetic and other properties, so they are widely used in various micro-nano devices, such as: laser generators devices, field-effect transistors, light-emitting diodes, nanogenerators, and piezoelectric transistors. [0003] Moreover, with the demand of the market and the improvement of living standards, the high stability and high performance of the device has become the main direction of further development, and the precise measurement of the electrical and mechanical properties around the ...

AI Technical Summary

Problems solved by technology

The defect of this measurement method is that the elongation and shortening of the nanowire under the action of the applied voltage signal will be bound by the lead electrodes at both ends, so the signal collected by the AFM is not the actual deformation of the sample, but will introduce relatively large Large error, unable to obtain high-precision measurement results

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