MOS tube parameter degradation detection circuit

Abstract

The invention relates to an MOS tube parameter degradation detection circuit comprising a stress test circuit, a standard clock input circuit, a sampling circuit, a sampling counter, a clock counter, a controller, and a processor. In the MOS tube parameter degradation detection circuit, the stress test circuit outputs a test signal characterizing the parameters of an MOS tube in the stress test circuit, the sampling circuit acquires sampling data according to the test signal, the sampling counter carries out counting according to the sampling data, the standard clock input circuit provides clock signals for the sampling circuit and the clock counter, the clock counter counts the clock signals, and the processor carries out calculation according to the count value of the sampling data and the count value of the clock signals to get the detection value of MOS tube parameter degradation. The detection circuit can complete detection of related values of MOS tube parameter degradation according to the composition thereof without the need for external equipment, the application scope of the detection circuit is improved effectively, and the requirement of online monitoring is satisfied.

Description

technical field [0001] The invention relates to the technical field of MOS tube detection circuits, in particular to a detection circuit for MOS tube parameter degradation. Background technique [0002] With the development of VLSI manufacturing technology towards the nanometer direction, the size and feature size of the device is getting smaller and smaller, but its normal operating voltage has not been proportionally reduced, resulting in an increasing local electric field inside the device channel. Carriers in the channel are easy to obtain greater energy in a strong electric field to form hot carriers. The energy of hot carriers is high, and they exist in the device channel, easily cross the interface barrier, inject into the gate oxide layer, be captured by the charge trap in the gate oxide layer or in Si-SiO 2 The interface produces an interface state, which causes changes in relevant parameters of the device, such as threshold voltage, transconductance, and drain cur...

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to provide a detection circuit for MOS tube parameter degradation for the problem of MOS tube parameter degradation caused by the HCI effect

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