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Semiconductor device, manufacturing method thereof, and electronic equipment including same

A semiconductor and device technology, applied in the semiconductor field, can solve problems such as mechanical and electrical stability problems, and achieve the effect of reducing the total capacitance

Active Publication Date: 2019-04-26
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One way to suppress this increase in capacitance is to use air gaps between components, but there are problems with their mechanical and electrical stability

Method used

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  • Semiconductor device, manufacturing method thereof, and electronic equipment including same
  • Semiconductor device, manufacturing method thereof, and electronic equipment including same
  • Semiconductor device, manufacturing method thereof, and electronic equipment including same

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Embodiment Construction

[0015] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0016] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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PUM

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Abstract

The invention discloses a semiconductor device, a manufacturing method of the semiconductor device and an electronic device comprising the semiconductor device. According to the embodiment, the semiconductor device may comprise a substrate; gate stacks formed on the substrate; gate side walls formed on the side walls of the gate stacks; and source regions and drain regions which are formed on the substrate and are located at two opposite sides relative to the gate stacks, wherein the gate side walls comprise a dielectric material and a negative capacitance material.

Description

technical field [0001] The present disclosure relates to semiconductor technology, and more particularly, to a semiconductor device capable of reducing inter-component capacitance, a method of manufacturing the same, and electronic equipment including the semiconductor device. Background technique [0002] As the density of devices in integrated circuits (ICs) continues to increase, the spacing between components is getting smaller and smaller. This increases the parasitic capacitance between components in the IC, such as between the gate electrode and the contact, and thus degrades the performance of the IC. On the other hand, even for less performance-critical devices, low power consumption, and thus reduced capacitance, is desired. One way to suppress this increase in capacitance is to use an air gap between components, but its mechanical and electrical stability has been problematic. [0003] Therefore, there is a need to be able to reduce the capacitance between compo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/423H01L21/28
CPCH01L21/28008H01L29/408H01L29/423H01L29/4234H01L29/42364H01L29/66477H01L29/78
Inventor 朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI