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IGBT circuit having dual-isolation characteristic and control method thereof

A driving circuit, dual technology, applied in the direction of electrical components, output power conversion devices, etc., can solve the problem of small output current, and achieve the effects of avoiding losses, personal safety, easy debugging, and ensuring safety

Active Publication Date: 2016-07-20
HANGZHOU DIANZI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional microprocessor cannot directly drive the IGBT through the drive transformer due to the small output current

Method used

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  • IGBT circuit having dual-isolation characteristic and control method thereof
  • IGBT circuit having dual-isolation characteristic and control method thereof
  • IGBT circuit having dual-isolation characteristic and control method thereof

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Embodiment Construction

[0022] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0023] Such as figure 1As shown, an IGBT driving circuit with double isolation includes a microprocessor P2, a dead drive module 1, an optocoupler isolation module 2, an H-bridge push-pull circuit driving module 3, a triode module 4 and a transformer post-stage driving module 5. The PWM output terminal of the microprocessor P2 is connected to the input terminal of the dead zone module 1, the output terminal of the dead zone module is connected to the optocoupler isolation module 2, and the output of the optocoupler isolation module is connected to the H bridge push-pull circuit drive module 3 through the triode module 4, The H-bridge push-pull circuit drive module directly drives the transformer rear-stage drive module 5 to drive the IGBT to turn on and off. The dead drive module makes the two PWM pulse signals generated by the microprocessor generate ...

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PUM

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Abstract

The invention discloses an IGBT circuit having a dual-isolation characteristic and a control method thereof. Therefore, a problem that a pulse signal outputted by a microprocessor can not drive an IGBT to work directly can be solved. A dead zone module enables two paths of PWM pulse signals generated by the microprocessor to generate dead zone time, so that simultaneous conduction of an upper IGBT tube and a lower IGBT tube can be avoided. An optical coupler isolation module carries out optoelectronic isolation on an input terminal signal and an output terminal signal to avoid mutual interference between signals. With an H-bridge push-pull circuit drive module, a pulse current value is increased to drive a high-frequency transformer; generation of a peak voltage and a current can be prevented by using a transformer post-stage drive module, so that forward turning-on voltage and backward turning off of the IGBT can be guaranteed. According to the invention, power amplification is carried out on a signal by using a dual isolation way; damages of a control circuit can be prevented while the IGBT is driven; driving circuit safety is guaranteed effectively when a fault occurs at the system; and excessive losses and personal safety can be avoided.

Description

technical field [0001] The invention belongs to the field of IGBT driving, and in particular relates to a driving circuit suitable for an ultrasonic power supply, and using an isolation circuit and a power amplifier circuit to amplify a PWM signal output by a microprocessor to drive IGBT on and off, and a control method for the driving circuit . Background technique [0002] IGBT is widely used in AC motors, inverters, lighting circuits, switching power supplies and other fields because of its various advantages. Different from traditional switching devices, IGBT is a new type of component that has both the high-speed switching function of the power transistor MOSFET and the high-voltage and high-current handling capabilities of the bipolar transistor. And with the popularization of the trend of intelligence, IGBT is a switching device, and it has become a development trend to use digital signals to control the turn-on and turn-off of the IGBT. The traditional microprocess...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/092H02M1/08
CPCH02M1/08H02M1/092
Inventor 刘东海胡小平于保华
Owner HANGZHOU DIANZI UNIV
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