Photoresist removal method and semiconductor device manufacturing method

Abstract

The invention provides a photoresist removal method and a semiconductor device manufacturing method. A photoresist layer to be removed is soaked and cleaned through a wet method in the low-temperature environment, most of hard shell on the surface of the photoresist layer can be softened and removed, and meanwhile cost for removing the whole photoresist layer can be reduced; then, a cleaned semiconductor substrate is subjected to ultraviolet irradiation and drying, low temperature is maintained, accordingly properties of remaining hard shell are changed, and the situation that volatile solvents in the photoresist are emitted and accordingly photoresist polymer impurities are caused is avoided so that the photoresist can be removed easily through the subsequent ashing treatment process; the semiconductor substrate cleaned through the wet method is dried, and accordingly a good reaction environment is provided for the subsequent ashing treatment process; finally, the whole photoresist removal process is quickly and efficiently completed through the ashing treatment process, the problem that the photoresist is left can be solved, device defects caused by photoresist residues are avoided, and stability and the yield of a manufactured semiconductor device are improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a photoresist removing method and a semiconductor device manufacturing method. Background technique [0002] In the manufacturing process of modern CMOS integrated circuits, almost all substrate structures are formed by ion implantation, so that they can meet the requirements of different functions of various devices. The manufacturing process of the doped regions of these substrate structures is as follows: first use photoresist or other structures above the surface to define the region to be implanted, and then use an ion implanter to embed high-energy ions (such as arsenic, phosphorus, boron, etc.) into the substrate, and finally remove the photoresist to obtain the desired doped region. However, during the process of implanting high-energy ions into a substrate wafer coated with photoresist, some of the high-energy ions will be adsorbed on the surface of the photor...

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Problems solved by technology

However, since the photoresist shell formed after the high-energy ion implantation is relatively hard, it is difficult to completely remove all the photoresist through an existing ashing process, and it is easy to cause relatively serious photoresist residue (PR Residue, such as figure 1 As shown in the dotted line box in ), these photoresist residues will bring many negative effects to the subsequent process, thereby reducing the stability of semiconductor devices and resulting in a decrease in product yield

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