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Diode spice simulation model equivalent circuit

A simulation model and equivalent circuit technology, applied in the field of effective circuits, can solve problems such as poor fitting of current-voltage characteristic curves, and achieve the effect of uniform current

Active Publication Date: 2019-08-27
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the voltage on the diode is greater than 2V, the current-voltage characteristics of the actual diode in the diode do not fit well with the curve in the model

Method used

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  • Diode spice simulation model equivalent circuit
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  • Diode spice simulation model equivalent circuit

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Experimental program
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Embodiment Construction

[0030] In the existing SPICE simulation, when performing the ESD transmission line pulse test, the existing shallow trench isolation (STI) diode model is generally used for simulation, and the simulation results can be referred to figure 1 .

[0031] figure 1 Among them, the curve 101 represents the current-voltage curve when using the P-channel N-type STI diode model in SPICE to perform the ESD transmission line pulse test, and the curve 102 represents the current-voltage curve of the actual diode when performing the ESD transmission line pulse test, and the curve 102 It is generated by sampling multiple voltage values ​​and fitting the corresponding current values. from figure 1 It can be seen that, when the voltage on the diode is less than 2V, the fitting degree of the curve 101 and the curve 102 is relatively high. When the voltage across the diode is greater than 2V, the fit between the curve 101 and the curve 102 is poor. This is because in the existing SPICE, when ...

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Abstract

The present invention relates to a diode SPICE simulation model. The simulation model comprises serially connecting a first resistor between an anode and a cathode of a diode model. The resistance of the first resistor is R1=R0[1+(Vr / Vsat)<n>]<(1+1 / n)>, wherein R0 is low field resistance, Vsat is saturation voltage, Vr is magnitude of voltage over the first resistor, and n is preset coefficient. By adoption of the diode SPICE simulation model, when heavy current ESD transmission line pulse test is carried out, fitting degree of a diode current-voltage simulation curve and an actual current-voltage characteristic curve can be effectively increased.

Description

technical field [0001] The invention relates to the technical field of electronic simulation, in particular to an equivalent circuit of a diode SPICE simulation model. Background technique [0002] Diode is a relatively important semiconductor device in semiconductor integrated circuits, and is widely used in the field of integrated circuit technology. In order to predict the performance and reliability of a diode device in its environment, it is necessary to simulate the diode. [0003] In practical applications, the diode is generally modeled and simulated in SPICE. SPICE (Simulation Program with Integrated Circuit Emphasis) is a circuit simulation program developed by the University of California, Berkeley, which can model and simulate various components. [0004] In the existing SPICE simulation, when performing the high-current Electro-Static discharge (ESD) transmission line pulse test (TLP), the existing P-channel N-type shallow trench isolation (STI) diode model is...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F9/455
Inventor 甘正浩张安叶好华黄威森
Owner SEMICON MFG INT (SHANGHAI) CORP