Memristor-based multi-valued storage unit, read-write circuit and operating method thereof

Abstract

The invention discloses a multilevel memory cell based on memristor, a read-write circuit and an operation method thereof. The multilevel memory cell is formed by connecting a plurality of memristors in a special mode based on the resistance changing characteristic of memristor. The multilevel memory cell has the advantages of memristor such as small volume, low energy consumption, strong expansibility, and the like. Compared with a conventional memristor memory structure, the multilevel memory structure provides a larger memory space, and a novel thinking is provided for memory design. The read-write circuit of the multilevel memory cell comprises a memory cell, a control switch, and a voltage comparison circuit. The read-write circuit can select the read / write / erase operations through an applied pulse signal, has the advantages of simple structure, few required devices, and precise read results, and can be applied to large-scale array memory by being combined with a location circuit.

Description

technical field [0001] The invention belongs to the field of memory, and more specifically relates to a memristor-based multi-valued storage unit and a read-write circuit thereof. Background technique [0002] Memristor was proposed by Cai Shaotang, a scientist at the University of California, Berkeley, in 1971. Professor Cai Shaotang predicted from the perspective of symmetry that in addition to capacitance, inductance and resistance, electronic circuits should also have a fourth basic component-memristor. Cai Shaotang pointed out that voltage v, current i, charge q and magnetic flux There should be six mathematical relationships between these four basic circuit variables: current is defined as the derivative of charge with respect to time i(t)=dq(t) / dt; voltage is the derivative of magnetic flux with respect to time Resistance is defined as the rate of change of voltage with current R = dv / di; capacitance is defined as the rate of change of charge with voltage C = dq / dv...

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Problems solved by technology

Cai Shaotang pointed out that voltage v, current i, charge q and magnetic flux There should be six mathematical relationships between these four basic circuit variables: current is defined as the derivative of charge with respect to time i(t)=dq(t) / dt; voltage is the derivative of magnetic flux with respect to time Resistance is defined as the rate of change of voltage with current R = dv / di; capacitance is defined as the rate of change of charge with voltage C = dq / dv; inductance is defined as the rate of change of magnetic flux with current Another problem is that there is a lack of a method that can connect the charge q with the magnetic flux associated circuit elements, and this element is composed of charge q and magnetic flux To define the relationship between them, Cai Shaotang named the component as memristor

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