Semiconductor device and method of forming the same
A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as affecting the process steps of transistors, and achieve the effects of protecting from damage, reducing the probability of etching and eliminating sharp corners as much as possible.
Active Publication Date: 2018-11-16
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
This can easily affect subsequent process steps for forming transistors
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[0051] As described in the background, the prior art uses a substrate structure similar to an SOI structure. However, the surface of the substrate is easily damaged during the process of manufacturing such a structure, which in turn affects subsequent process steps for forming transistors on the surface of the substrate.
[0052] In order to solve the above problems, the present invention provides a method for forming a semiconductor device, comprising the following steps:
[0053] providing a substrate; forming a first opening in the substrate; etching the bottom of the first opening in the substrate to form a second opening having a size larger than the first opening under the first opening in the substrate Opening, the first opening and its corresponding second opening jointly form a flask-shaped opening; a first oxide layer is formed on the side wall of the flask-shaped opening; A second oxide layer of the same material as the oxide layer, so that the second oxide layer f...
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Abstract
The invention provides a semiconductor device and a formation method thereof. The formation method comprises the steps of forming a first opening and a second opening in a substrate, wherein the first opening and the second opening form a flask-shaped opening together, forming a first oxidation layer, forming a second oxidation layer which is of the same material with the first oxidation layer, and enabling the second oxidation layer to fill the entrance of the flask-shaped opening, wherein the surface of the second oxidation layer is not lower than the surface of the substrate. The semiconductor device comprises a substrate, a first opening, a second opening, a first oxidation layer and a second oxidation layer, and is characterized in that the first opening and the second opening form a flask-shaped opening together which is located in the substrate; the first oxidation layer is formed at the side wall of the flask-shaped opening, the surface of the second oxidation layer is not lower than the surface of the substrate, and the second oxidation layer and the first oxidation layer are identical in material. The beneficial effects lie in that a sharp corner located at the entrance of the flask-shaped opening in the substrate is removed, the probability that the substrate is affected by etching can be reduced in the process of etching the first oxidation layer so as to expose the substrate, and thus the purpose of protecting the substrate from being damaged as far as possible is achieved.
Description
technical field [0001] The invention relates to the field of conductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] A silicon-on-insulator (Silicon On Insulator, SOI) structure is a substrate structure used in the manufacture of integrated circuits. The SOI substrate structure has many advantages. For example, integrated circuits made of substrates with this structure have small parasitic capacitance, high integration density, small short channel effect, and high speed, and can also realize the integration of components in integrated circuits. Media isolation. [0003] However, the price of the SOI structure is usually relatively expensive, which increases the cost burden for production. Therefore, in the prior art, those skilled in the art began to form an SOI-like structure in the following manner: [0004] refer to figure 1 , in the prior art, those skilled in the art form several flask-shaped openi...
Claims
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IPC IPC(8): H01L27/12H01L21/762
Inventor 伏广才王刚宁姜海涛董宁孙泓
Owner SEMICON MFG INT (SHANGHAI) CORP