Method for detecting quality of mask
A mask plate quality technology, applied in the field of mask plate quality detection, can solve the problems of slow detection speed, high equipment price, lack of versatility, etc., to achieve the effect of monitoring quality and increasing detection
Inactive Publication Date: 2016-08-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0010] 1. The price of AIMS system equipment is very high, the detection speed is too slow, and it depends on exposure conditions, which is not universal and cannot meet production needs
[0011] 2. Usually the AIMS system only detects CD and does not compare the threshold value. Even if the AIMS spectrum changes, as long as the CD is normal, the mask is still considered qualified
[0015] The above problems cannot be reflected in the traditional mask factory specifications and testing standards
Method used
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Embodiment Construction
[0036] The method for detecting mask quality of the present invention comprises the following steps:
[0037] Step 1, generate a set of measurement patterns, the measurement patterns include at least two patterns: one completely removes the chromium, and fully exposes the substrate glass substrate, which is called a full-open pattern, such as Figure 5 shown; and a 1:1 minimum design rule of chrome partly removed, partly exposed substrate glass substrate graphics, called 1:1 graphics, such as Figure 6 As shown, the glass substrate is exposed between the strips of chromium, and the distance between the strips of chromium is the CD value. The measurement figures shown are either square or circular. The side length of a square or the diameter of a circle is greater than 80 μm.
[0038] Step 2, using the measurement patterns to generate a standard mask, the standard mask including at least 5 measurement patterns evenly distributed within the exposure range of the mask.
[0039...
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Abstract
The invention discloses a method for detecting quality of a mask. The method comprises the following steps of: S1, generating a group of measurement graphs, wherein the measurement graphs comprise at least two graphs: one graph formed by removing all chromium and exposing a base glass substrate, and one graph formed by partially removing chromium in a ratio of 1:1 according to the minimum design rule and exposing the base glass substrate; S2, generating a standard mask by the measurement graphs, wherein the measurement graphs included in the standard mask are uniformly distributed in an exposure range of the mask; S3, irradiating the measurement graphs of the standard mask by using a focused beam for actual production, measuring transmittance of the standard mask and carrying out AIMS system testing to determine a threshold of the standard mask under a standard CD (Critical Dimension); and S4, lacing the measurement graphs in an actual mask, and when the actual mask leaves a factory, detecting transmittance of the actual mask and a threshold of the actual mask under the standard CD, which is measured by an AIMS system, and comparing the detected transmittance and threshold with the transmittance and threshold obtained in the step S3.
Description
technical field [0001] The invention relates to the field of integrated circuit design and manufacture, in particular to a method for detecting the quality of a mask plate. Background technique [0002] Photolithography (photoetching or lithography) is the process of removing specific parts of the wafer surface film through a series of production steps. After this, a film with a micropatterned structure remains on the wafer surface. Through the photolithography process, what is finally reserved on the wafer is the characteristic pattern part. The goal of lithography production is to generate feature patterns with precise dimensions according to the requirements of the circuit design, and the correct position on the wafer surface and the correct association with other parts (parts). [0003] Photolithography is the most critical step in the basic process. Photolithography determines the critical dimensions of the device. Errors in the photolithography process can cause pa...
Claims
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IPC IPC(8): G03F1/44G03F7/20
CPCG03F1/44G03F7/70616
Inventor 王雷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP