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sputtering target

A technology for sputtering targets and substrates, which is applied in the field of sputtering targets and can solve problems such as film formation of thin films that cannot fully solve components

Active Publication Date: 2020-12-15
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the technology described in Prior Art Document 1 cannot sufficiently solve the problem of forming a thin film of a desired component.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] In the divided sputtering target of Example 1, a part of the bonding material 3 attached to the bottom of the divided portion of the liner 4 mainly formed of Ti was removed using a jig formed of polyimide resin. Figure 3A and Figure 3B It is the EPMA analysis result of the region corresponding to the divided part of the base material of the divided sputtering target of Example 1, Figure 3A For the analysis results of In, Figure 3B is the analysis result of Ti. exist Figure 3B In , the region where Ti exists is small, but it can be confirmed. Therefore, the In alloy is mainly present in the recesses of the unevenness on the surface of the base material, and the In alloy is present at approximately the same height as the surface of the base material (almost the same height as the surface of the base material before the formation of the unevenness on the base material or at the same height as the surface of the base material). within the range of substantially the...

Embodiment 2

[0052] In the divided sputtering target of Example 2, a part of the bonding material 3 attached to the bottom of the divided portion of the liner 4 mainly formed of Ti was removed using a jig formed of polyimide resin. Figure 4A and Figure 4B It is the EPMA analysis result of the area|region corresponding to a division|segmentation part of the base material of the divided sputtering target of Example 2. Figure 4A For the analysis results of In, Figure 4B is the analysis result of Ti. According to the EPMA analysis of In, the area where the In alloy as the joining material 3 exists is 74.75% of the observed area.

Embodiment 3

[0054] In the divided sputtering target of Example 3, a part of the bonding material 3 attached to the bottom of the divided portion of the liner 4 mainly formed of Ti was removed using a jig formed of polyimide amide resin. Figure 5A and Figure 5B It is the EPMA analysis result of the area|region corresponding to a division|segmentation part of the base material of the divided sputtering target of Example 3. Figure 5A For the analysis results of In, Figure 5B is the analysis result of Ti. According to the EPMA analysis of In, the area where the In alloy as the joining material 3 exists is 44.65% of the observed area.

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Abstract

The present invention relates to a sputtering target which is effective for preventing a forming film from mixing in a portion of a substrate that is exposed from a gap (dividing portion) between target members or a linear forming material in a divided sputtering target obtained by bonding a plurality of target members onto a substrate. In or In alloy is mainly inserted into the surface of the concave portion of the bumpy surface of the base material in the region corresponding to the divided portion where the target member is disposed at a predetermined interval. In the case of using the EPMA to analyze the surface of the region of the base material corresponding to the divided portion, the area ratio of the region of the In or In alloy to the viewing area is 40% or more and 80% or less.

Description

technical field [0001] This invention relates to sputtering targets. In particular, it relates to a ceramic segmented sputtering target bonded to a backing plate or a liner. Background technique [0002] A target member for forming an oxide semiconductor film is made of ceramics, so it is difficult to manufacture a large-area target member. On the other hand, the area of ​​the sputtered oxide semiconductor thin film tends to increase. Thus, as a sputtering target, by bonding a plurality of target members to a backing plate or a backing tube (hereinafter, simply referred to as "substrate"), the sputtering of the oxide semiconductor can be handled. increase in the area of ​​the film. [0003] Usually, when bonding a some target member to a base material, it arrange|positions so that predetermined space|interval may be spaced between target members. This is because if the target member is arranged without gaps and the target member is bonded to the backing plate, the target...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34H01L21/203
CPCC23C14/34C23C14/3407C23C14/3464H01L21/02631
Inventor 馆野谕
Owner JX NIPPON MINING & METALS CORP