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A Method for Lowering the Equilibrium Temperature of Objects by Infrared Radiation

A technology of balancing temperature and infrared radiation, which is applied in the field of infrared radiation to reduce the equilibrium temperature of objects, and the application field of infrared radiation in the heat dissipation of electronic components. highly operable effect

Active Publication Date: 2018-07-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, water vapor, carbon dioxide and ozone in the atmosphere have a strong absorption of infrared rays with a wavelength outside the atmospheric window of 8-13 μm, which hinders the direct heat dissipation of ground objects to space.

Method used

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  • A Method for Lowering the Equilibrium Temperature of Objects by Infrared Radiation
  • A Method for Lowering the Equilibrium Temperature of Objects by Infrared Radiation
  • A Method for Lowering the Equilibrium Temperature of Objects by Infrared Radiation

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Experimental program
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Effect test

Embodiment 1

[0024] A periodic structure to achieve high emissivity in the band is to grow a layer of square aluminum oxide film pattern with a thickness of 60nm, a side length of 1.8μm, and a period of 2.4μm on a 200nm thick aluminum film, and finally grow another layer An aluminum film with a thickness of 50nm, and the aluminum film has the same side length and period as the aluminum oxide film.

[0025] For the periodic structure designed in the above way, the high emissivity band is 5.1-6.1 μm, and the emissivity is 0.7, and the other wavelengths are low emissivity, and the emissivity is 0.3. Aluminum has an emissivity of 0.1. When the surface of the object is aluminum and the temperature is 327K, the temperature of the high emission film is 325K. And as the temperature of the heating plate increases to 753K, the temperature difference between the high-emission film and the aluminum film can reach 15K.

Embodiment 2

[0027] A periodic structure to achieve high emissivity in the band is to grow a circular yttrium trioxide film pattern with a thickness of 60nm, a diameter of 1.7μm, and a period of 2.4μm on a 200nm thick aluminum film, and finally grow another layer An aluminum film with a thickness of 100 nm, and the aluminum film has the same diameter and period as the diyttrium trioxide film.

[0028] The periodic structure designed in the above way has a high emissivity band of 5.6-6.5 μm with an emissivity of 0.8, and low emissivity of other wavelengths with an emissivity of 0.16. Aluminum has an emissivity of 0.1. When the surface of the object is aluminum and the temperature is 327K, the temperature of the high emissivity film is 326K. And as the temperature of the heating plate increases to 753K, the temperature difference between the high emissivity film and the aluminum film can reach 18K.

Embodiment 3

[0030] A periodic structure to achieve high emissivity in the band is to grow a circular pattern of aluminum oxide film with a thickness of 250nm, a diameter of 3.2μm, and a period of 6μm on a 200nm thick aluminum film, and finally grow another layer of thickness It is an aluminum film of 100nm, and the aluminum film has the same diameter and period as the aluminum oxide film.

[0031] The periodic structure designed in the above way has a high emissivity band of 8-10 μm with an emissivity of 0.6, and low emissivity of other wavelengths with an emissivity of 0.15. Aluminum has an emissivity of 0.1. When the surface of the object is aluminum and the temperature is 327K, the temperature of the high emission film is 325K. And as the temperature of the heating plate increases to 753K, the temperature difference between the high-emission film and the aluminum film can reach 20K.

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Abstract

The invention belongs to the field of thermal design, in particular to a method for reducing the equilibrium temperature of an object through infrared radiation. In the present invention, a layer of high-emissivity thin film is arranged on the surface of the object to increase the infrared radiation capability of the object surface, thereby taking away the heat on the object surface to complete the heat dissipation function; and the wider the bandwidth of the high emissivity, the higher the emissivity. The larger the temperature is, the more obvious the cooling effect will be. The thickness of the film is on the order of several microns, and its high emissivity band is in the range of 2.5 μm-25 μm and has an emissivity greater than 0.5. The invention has the advantages of simple and mature high-emissivity film manufacturing process, strong operability, and low cost; no additional energy input is required, and it belongs to passive cooling; the higher the surface temperature of the object, the more obvious the cooling effect; it is different from heat sinks, etc. The traditional passive heat dissipation method does not need the joint action of fans and other assistance to achieve the purpose of heat dissipation.

Description

technical field [0001] The invention belongs to the field of thermal design, and in particular relates to the application of infrared radiation in the heat dissipation of electronic components, in particular to a method for reducing the equilibrium temperature of an object through infrared radiation. Background technique [0002] With the rapid development of electronics and communication technology, high-performance chips and integrated circuits are used more and more widely. The power of electronic device chips continues to increase, but the volume is gradually shrinking, and most electronic chips have low standby heat and high operating heat, and the instantaneous temperature rises quickly. High temperature will have a harmful effect on the performance of electronic devices. According to statistics, 55% of the failures of electronic devices are caused by the temperature exceeding the specified value. The heat dissipation technology of electronic devices has become a very ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/367H01L21/02
Inventor 周佩珩郝松谢建良邓龙江翁小龙
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA