Customized dummy hatching methods

A virtual pattern and filling method technology, applied in the direction of comprehensive factory control, instrumentation, calculation, etc., can solve problems such as time-consuming, and achieve the effect of guaranteed quality and high efficiency

Active Publication Date: 2019-04-09
SEMICON MFG INT (SHANGHAI) CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For such requirements, the existing method is to recreate the virtual pattern script, and because different layer settings also need to do quality assessment (Quality Assessment, QA) for the user-specific virtual pattern utility, which will consume a lot of time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Customized dummy hatching methods
  • Customized dummy hatching methods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0019] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0020] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the / the" are intended to include...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a customized virtual pattern filling method. The customized virtual pattern filling method includes a user layout importing step, a layout layer mapping conversion step, a virtual pattern filling step, a layout merging step and a final layout output step. Wherein, the layout layer mapping conversion step converts the user layout layer mapping into a standard layout layer mapping before the virtual pattern filling step, and converts the standard layout layer mapping into a user layout layer mapping after the virtual pattern filling step. layout layer mapping; and said virtual hatching step using a standard virtual pattern utility for virtual hatching. The customized virtual pattern filling method provided by the present invention can quickly and accurately create a qualified customized virtual pattern filling scheme based on user requirements, not only with high efficiency, but also with guaranteed quality.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for filling a customized dummy pattern. Background technique [0002] As semiconductor technology tends to be below 40nm mode, Design for Manufacture (DFM) automatically fills dummy patterns to play an increasingly important role. It can help improve pattern density distribution, uniform device performance, enhance lithography / etch process window, etc. Sometimes, it is necessary not only to provide internal standard dummy utility, but also to provide users with customized special dummy utility based on user needs. For such requirements, the existing method is to recreate the virtual pattern script, and because different layer settings also need to do quality assessment (Quality Assessment, QA) for the user-specific virtual pattern utility, which will consume a lot of time. Contents of the invention [0003] Aiming at the deficiencies of the prior art, the pres...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
CPCG06F30/39G06F2119/18Y02P90/02
Inventor 樊强
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap