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Light-emitting diode with electrostatic protection and manufacturing method thereof

A technology for light-emitting diodes and electrostatic protection, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of limiting the simplicity, reduction, and incompatibility of LED applications.

Active Publication Date: 2019-01-15
TIANJIN SANAN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the structure to prevent the reverse voltage from breaking down the light-emitting diode must be a chip structure on the same side as the PN electrode of the horizontal plate, which is not suitable for the vertical version of the chip. This problem is greatly reduced and limits the simplicity of LED applications.

Method used

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  • Light-emitting diode with electrostatic protection and manufacturing method thereof
  • Light-emitting diode with electrostatic protection and manufacturing method thereof
  • Light-emitting diode with electrostatic protection and manufacturing method thereof

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Embodiment Construction

[0023] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.

[0024] Please see attached figure 1 , an epitaxial structure of a light-emitting diode implemented according to the present invention, comprising: a growth substrate 100, a first etch stop layer 111, an N-type layer 112 of an electrostatic protection layer, a P-type layer 113 of an electrostatic protection layer, and a P-type heavily doped Layer 114, N-type heavily doped layer 115, second etch stop layer 116...

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Abstract

A light emitting diode with an electrostatic protection function and a manufacturing method therefor. An electrostatic protection region, an electrode region and a light emission region are arranged on a light emission surface of a chip. A first N-type ohmic contact electrode (141) is formed on the electrode region. An antistatic protection structure composed of an etching stop layer (116), tunnel junctions (114, 115), electrostatic protection layers (112, 113) and a second N-type ohmic contact electrode (142) is formed in the electrostatic protection region. When the light emitting diode is subjected to an electrostatic reverse biased voltage, the antistatic protection structure works. The current passes through the first N-type ohmic contact electrode (141) and the electrostatic protection structure to the second N-type ohmic contact electrode (142), so that the damage of the light emitting layer caused by an overhigh electrostatic reverse biased voltage can be avoided.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a light emitting diode with an antistatic protection structure and a manufacturing method thereof. Background technique [0002] A light-emitting diode is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. The forward and reverse currents or voltages of light-emitting diodes must pass through the light-emitting layer. When the reverse voltage is too large, the chip may be broken down, resulting in chip function failure. [0003] Chinese patent application CN102308397A discloses a light-emitting diode and a light-emitting diode lamp, which is provided with a third electrode at the bottom of a transparent substrate. They are electrically connected to be equipotential or substantially equipotential, and the breakdown voltage from the transparent substrate side ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/00
CPCH01L33/00H01L33/02
Inventor 吴超瑜吴俊毅王笃祥
Owner TIANJIN SANAN OPTOELECTRONICS