Constructing method of noise model for millimeter waves FET

Abstract

The invention provides a constructing method of a noise model for millimeter waves FET. The model comprises following steps: dividing millimeter waves FET into a passive structure area and an active structure area; equalizing the width direction of the active structure area along grid electrodes into N first units, equalizing the first units into parts equal to the number of fingers of millimeter waves FET in order to obtain multiple second units; setting up a low-frequency noise model of millimeter waves FET and utilizing the low-frequency noise model to obtain an intrinsic parameter network containing intrinsic parameters and noise source expressions of the second units; calculating transmission features of millimeter wave signals in input electrodes and output electrodes of millimeter waves FET in order to obtain input electrode S parameters and electrode S parameters; and connecting an intrinsic parameter network, input electrode S parameters and output electrodes S parameters of the second unit according to port corresponding relations in order to obtain a noise model of millimeter waves FET. The noise model has higher precision in millimeter waves and high frequencies.

Description

technical field [0001] The invention relates to the technical field of transistor modeling, in particular to a method for establishing a noise model of a millimeter-wave FET. Background technique [0002] The device model plays a vital role in circuit design and acts as a bridge between circuit design and process design. As the operating frequency of the circuit enters the microwave and even higher frequency bands, the traditional experience-based design method is increasingly unable to meet the requirements of circuit design, so it will become more and more important to obtain accurate device models, which can not only improve circuit design. Accuracy, reduce process repetition, and can reduce product costs, shorten the development cycle. [0003] As the feature size of Field Effect Transistor (FET) decreases, its operating frequency enters the millimeter wave or even terahertz frequency band, and the corresponding operating wavelength is only on the order of submillimeter...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem of poor accuracy of the traditional FET noise model established based on lumped parameter networks at millimeter waves and higher frequencies, the present invention provides a noise model establishment method for millimeter wave FETs

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