Constructing method of noise model for millimeter waves FET

A technology of noise model and establishment method, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve the problem of poor accuracy of FET noise model, achieve the effect of high model accuracy and avoid parasitic parameter extraction

Active Publication Date: 2016-10-26
CHENGDU HIWAFER SEMICON CO LTD
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Problems solved by technology

[0005] In order to solve the problem of poor accuracy of the traditional FET noise model established based on lumped parameter networks

Method used

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  • Constructing method of noise model for millimeter waves FET
  • Constructing method of noise model for millimeter waves FET
  • Constructing method of noise model for millimeter waves FET

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[0024] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0025] See figure 1 , Is a schematic flowchart of a method for establishing a noise model of a millimeter-wave FET according to an embodiment of the present invention. The noise model establishment method of the embodiment of the present invention includes the following steps:

[0026] S1: The millimeter wave FET is divided into a passive structure area and an active structure area. The passive structure area includes an input electrode an...

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Abstract

The invention provides a constructing method of a noise model for millimeter waves FET. The model comprises following steps: dividing millimeter waves FET into a passive structure area and an active structure area; equalizing the width direction of the active structure area along grid electrodes into N first units, equalizing the first units into parts equal to the number of fingers of millimeter waves FET in order to obtain multiple second units; setting up a low-frequency noise model of millimeter waves FET and utilizing the low-frequency noise model to obtain an intrinsic parameter network containing intrinsic parameters and noise source expressions of the second units; calculating transmission features of millimeter wave signals in input electrodes and output electrodes of millimeter waves FET in order to obtain input electrode S parameters and electrode S parameters; and connecting an intrinsic parameter network, input electrode S parameters and output electrodes S parameters of the second unit according to port corresponding relations in order to obtain a noise model of millimeter waves FET. The noise model has higher precision in millimeter waves and high frequencies.

Description

technical field [0001] The invention relates to the technical field of transistor modeling, in particular to a method for establishing a noise model of a millimeter-wave FET. Background technique [0002] The device model plays a vital role in circuit design and acts as a bridge between circuit design and process design. As the operating frequency of the circuit enters the microwave and even higher frequency bands, the traditional experience-based design method is increasingly unable to meet the requirements of circuit design, so it will become more and more important to obtain accurate device models, which can not only improve circuit design. Accuracy, reduce process repetition, and can reduce product costs, shorten the development cycle. [0003] As the feature size of Field Effect Transistor (FET) decreases, its operating frequency enters the millimeter wave or even terahertz frequency band, and the corresponding operating wavelength is only on the order of submillimeter...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/367
Inventor 陈勇波
Owner CHENGDU HIWAFER SEMICON CO LTD
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