Transparent material defect analysis method

A technology for transparent material and defect analysis, which is applied in the fields of material analysis using radiation, electrical components, semiconductor/solid-state device manufacturing, etc. Difficult to obtain physical maps and other issues, to achieve ideal results, high accuracy, and easy analysis

Active Publication Date: 2016-10-26
EPIWORLD INT
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  • Description
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  • Application Information

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Problems solved by technology

Some wafers, such as SiC wafers, are a kind of transparent material with a mirror surface, which has shortcomings such as reflection and poor anti-light interference. If conventional methods, such as camera photography, are

Method used

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  • Transparent material defect analysis method

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Example Embodiment

[0022] The defect analysis method of a transparent material of this embodiment firstly provides a transparent material to be analyzed, performs microscopic defect detection on the transparent material to obtain a defect distribution map, and then attaches the transparent material to the defect distribution map through alignment. , Use the scanner to scan the image to obtain the object-result comparison chart, and analyze the correlation between the defect and the appearance of the transparent material through the object-result comparison chart.

[0023] The detection of micro-defects of transparent materials is to scan the surface of transparent materials by laser, and obtain the specific distribution of various types of micro-defects by detecting the scattering intensity, shape change, surface reflectivity and phase shift, etc., and obtain the actual size and shape of the transparent material. Matched defect distribution map. The defect distribution map is preferably a coordinat...

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Abstract

The invention discloses a transparent material defect analysis method comprising the steps of carrying out micro defect detection on a transparent material to get a defect distribution map matching a transparent material object, attaching the transparent material onto the defect distribution map through aligned overlapping, performing image scanning using a scanner to get an object-result contrast map, and analyzing the correlation between defects and the appearance of the transparent material based on the object-result contrast map. According to the method, a real image of the transparent material and intuitive contrast between the real image and the defect distribution map are acquired through the image replication function of the scanner, and then, the correlation between micro defects and problems like transparent material breakage is found out. The method is highly resistant to light interference, simple to operate and highly reliable, and has practical application value.

Description

technical field [0001] The invention relates to material analysis technology, in particular to a defect analysis method for transparent materials. Background technique [0002] Semiconductor wafers are the raw materials used to make integrated circuit devices. Their structure and performance directly affect the stability and reliability of finished devices. Therefore, the quality inspection and analysis of semiconductor wafers is of great significance. Quality inspection and analysis can be used to find defects in production. problems and then to improve the production process. Semiconductor wafer materials have more or less small defects. The diameter of the largest defect reaches 1-2 mm, and the small defect is about 30 μm or even smaller. It cannot be accurately distinguished under the current ordinary optical conditions, and professional defect detection is required. The instrument detects the defects one by one and displays them through the result graph. The result gr...

Claims

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Application Information

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IPC IPC(8): H01L21/66H01L21/02G01N23/02
CPCG01N23/02H01L21/02H01L22/12
Inventor 吕立平
Owner EPIWORLD INT
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